JPS5687346A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5687346A
JPS5687346A JP16427079A JP16427079A JPS5687346A JP S5687346 A JPS5687346 A JP S5687346A JP 16427079 A JP16427079 A JP 16427079A JP 16427079 A JP16427079 A JP 16427079A JP S5687346 A JPS5687346 A JP S5687346A
Authority
JP
Japan
Prior art keywords
wiring
insulating film
sio2 film
film
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16427079A
Other languages
Japanese (ja)
Inventor
Keizo Kobayashi
Osamu Kudo
Yukinobu Murao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16427079A priority Critical patent/JPS5687346A/en
Publication of JPS5687346A publication Critical patent/JPS5687346A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Abstract

PURPOSE:To eliminate the short-circuit and the leak within multilayer wirings when the multilayer wirings of polycrystalline Si are to be formed on the semiconductor substrate by a method wherein after the lower layer polycrystalline Si wiring is covered with an SiO2 film and with an insulating film having a large etching speed, the upper insulating film is removed and the upper layer wiring is performed. CONSTITUTION:An SiO2 film 102 is formed on a P type Si substrate 101. Then the lower layer polysilicon wiring 104 being added with phosphorus and the SiO2 film 105 to cover the wiring 104 are provided. The whole surface is covered with the insulating film 301 of Si3N4, Al2O3, etc., having larger etching speed than the SiO2 film 105. When etching is performed on the whole surface, the insulating film 302 is remained burying the groove part 106. Even the upper polysilicon wiring is provided on it, the short-circuit, the leak, etc. through the groove part of the SiO2 film are eliminated, and the multilayer wiring having a high yield and reliability can be obtained.
JP16427079A 1979-12-18 1979-12-18 Manufacture of semiconductor device Pending JPS5687346A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16427079A JPS5687346A (en) 1979-12-18 1979-12-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16427079A JPS5687346A (en) 1979-12-18 1979-12-18 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5687346A true JPS5687346A (en) 1981-07-15

Family

ID=15789891

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16427079A Pending JPS5687346A (en) 1979-12-18 1979-12-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5687346A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0091624A2 (en) * 1982-04-09 1983-10-19 Nissan Motor Co., Ltd. Method of manufacturing vertical semiconductor devices
JPS6365645A (en) * 1986-09-05 1988-03-24 Nec Corp Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5658246A (en) * 1979-10-08 1981-05-21 Philips Nv Method of manufacturing semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5658246A (en) * 1979-10-08 1981-05-21 Philips Nv Method of manufacturing semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0091624A2 (en) * 1982-04-09 1983-10-19 Nissan Motor Co., Ltd. Method of manufacturing vertical semiconductor devices
JPS6365645A (en) * 1986-09-05 1988-03-24 Nec Corp Manufacture of semiconductor device

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