JPS5740957A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5740957A JPS5740957A JP11739380A JP11739380A JPS5740957A JP S5740957 A JPS5740957 A JP S5740957A JP 11739380 A JP11739380 A JP 11739380A JP 11739380 A JP11739380 A JP 11739380A JP S5740957 A JPS5740957 A JP S5740957A
- Authority
- JP
- Japan
- Prior art keywords
- wiring layer
- silicon
- film
- oxide film
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To optimize etching conditions of forming contact holes and to increase processing accuracy, by a method wherein thermal oxidization is applied to the surface of an upper semiconductor wiring layer and the thickness of an insulating film on the upper semiconductor wiring layer is decided regardless of its thickness on the lower semiconductor wiring layer. CONSTITUTION:A thermal oxide film 2 is formed on the surface of a silicon substrate 1 and vapor growth is applied to a phosphor doped polycrystalline silicon film for patterning and a lower silicon wiring layer 3 is formed. Next, a silicon oxide film 4, a silicon nitride film 5 are formed by vapor growth. Next, an upper silicon wiring layer 6 is formed by forming contact holes. Next, thermal oxidization is applied to the surface of the upper silicon wiring layer 6 to form a silicon oxide film 7. Next, a silicon oxide film 8 is formed to provide openings and to form aluminum wirings 9. The thickness of the film 7 can independently be decided and the optimum etching conditions can be established for all the contact holes and accuracy can be increased.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11739380A JPS5740957A (en) | 1980-08-26 | 1980-08-26 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11739380A JPS5740957A (en) | 1980-08-26 | 1980-08-26 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5740957A true JPS5740957A (en) | 1982-03-06 |
JPS623980B2 JPS623980B2 (en) | 1987-01-28 |
Family
ID=14710535
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11739380A Granted JPS5740957A (en) | 1980-08-26 | 1980-08-26 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5740957A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60240141A (en) * | 1984-05-15 | 1985-11-29 | Nec Corp | Manufacture of semiconductor device |
-
1980
- 1980-08-26 JP JP11739380A patent/JPS5740957A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60240141A (en) * | 1984-05-15 | 1985-11-29 | Nec Corp | Manufacture of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS623980B2 (en) | 1987-01-28 |
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