JPS5740957A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5740957A
JPS5740957A JP11739380A JP11739380A JPS5740957A JP S5740957 A JPS5740957 A JP S5740957A JP 11739380 A JP11739380 A JP 11739380A JP 11739380 A JP11739380 A JP 11739380A JP S5740957 A JPS5740957 A JP S5740957A
Authority
JP
Japan
Prior art keywords
wiring layer
silicon
film
oxide film
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11739380A
Other languages
Japanese (ja)
Other versions
JPS623980B2 (en
Inventor
Isao Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11739380A priority Critical patent/JPS5740957A/en
Publication of JPS5740957A publication Critical patent/JPS5740957A/en
Publication of JPS623980B2 publication Critical patent/JPS623980B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To optimize etching conditions of forming contact holes and to increase processing accuracy, by a method wherein thermal oxidization is applied to the surface of an upper semiconductor wiring layer and the thickness of an insulating film on the upper semiconductor wiring layer is decided regardless of its thickness on the lower semiconductor wiring layer. CONSTITUTION:A thermal oxide film 2 is formed on the surface of a silicon substrate 1 and vapor growth is applied to a phosphor doped polycrystalline silicon film for patterning and a lower silicon wiring layer 3 is formed. Next, a silicon oxide film 4, a silicon nitride film 5 are formed by vapor growth. Next, an upper silicon wiring layer 6 is formed by forming contact holes. Next, thermal oxidization is applied to the surface of the upper silicon wiring layer 6 to form a silicon oxide film 7. Next, a silicon oxide film 8 is formed to provide openings and to form aluminum wirings 9. The thickness of the film 7 can independently be decided and the optimum etching conditions can be established for all the contact holes and accuracy can be increased.
JP11739380A 1980-08-26 1980-08-26 Manufacture of semiconductor device Granted JPS5740957A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11739380A JPS5740957A (en) 1980-08-26 1980-08-26 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11739380A JPS5740957A (en) 1980-08-26 1980-08-26 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5740957A true JPS5740957A (en) 1982-03-06
JPS623980B2 JPS623980B2 (en) 1987-01-28

Family

ID=14710535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11739380A Granted JPS5740957A (en) 1980-08-26 1980-08-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5740957A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60240141A (en) * 1984-05-15 1985-11-29 Nec Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60240141A (en) * 1984-05-15 1985-11-29 Nec Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS623980B2 (en) 1987-01-28

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