JPS55138857A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55138857A
JPS55138857A JP4741679A JP4741679A JPS55138857A JP S55138857 A JPS55138857 A JP S55138857A JP 4741679 A JP4741679 A JP 4741679A JP 4741679 A JP4741679 A JP 4741679A JP S55138857 A JPS55138857 A JP S55138857A
Authority
JP
Japan
Prior art keywords
layer
wiring layer
aluminum
silicon
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4741679A
Other languages
Japanese (ja)
Inventor
Atsushi Nakano
Koji Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4741679A priority Critical patent/JPS55138857A/en
Publication of JPS55138857A publication Critical patent/JPS55138857A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent the disconnection of an aluminum wire and to enhance the reliability of a semiconductor device by forming an insulating layer made of silicon nitride on the surface of a semiconductor substrate and a metallic wiring layer and coating phosphorus, silicon, glass on the surface of the metallic wiring layer. CONSTITUTION:A field oxide film 7 is formed on a p-type silicon substrate 1, and a gate insulating film 6 and a gate electrode 5 made of polycrystalline silicon are selectively formed thereon. A PSG film 8 is then formed on the surface of the substrate 1 to form a source region 9, a drain region 10 and an aluminum wiring layer 2 thereon. Thereafter, a silicon nitride layer 13 is formed as an insulating film between the wiring layers by a CVD process, openings for connecting between the layers are perforated, the second aluminum layer is then formed thereon, and patterned to form the second aluminum wiring layer 3 thereon.
JP4741679A 1979-04-18 1979-04-18 Semiconductor device Pending JPS55138857A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4741679A JPS55138857A (en) 1979-04-18 1979-04-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4741679A JPS55138857A (en) 1979-04-18 1979-04-18 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55138857A true JPS55138857A (en) 1980-10-30

Family

ID=12774537

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4741679A Pending JPS55138857A (en) 1979-04-18 1979-04-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55138857A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5349970A (en) * 1976-10-18 1978-05-06 Hitachi Ltd Semiconductor device
JPS5411688A (en) * 1977-06-27 1979-01-27 Fujitsu Ltd Manufacture for semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5349970A (en) * 1976-10-18 1978-05-06 Hitachi Ltd Semiconductor device
JPS5411688A (en) * 1977-06-27 1979-01-27 Fujitsu Ltd Manufacture for semiconductor device

Similar Documents

Publication Publication Date Title
JPS55163860A (en) Manufacture of semiconductor device
GB1422033A (en) Method of manufacturing a semiconductor device
JPS5669844A (en) Manufacture of semiconductor device
JPS5599722A (en) Preparation of semiconductor device
KR860000612B1 (en) Semi conductor apparatus and manufacturing method
JPS55138857A (en) Semiconductor device
JPS5764927A (en) Manufacture of semiconductor device
JPS55138859A (en) Multilayer wiring type semiconductor device
JPS5583264A (en) Method of fabricating mos semiconductor device
JPS5758338A (en) Semiconductor integrated device
JPS5793548A (en) Manufacture of semiconductor device
JPS5461490A (en) Multi-layer wiring forming method in semiconductor device
JPS5740967A (en) Integrated circuit device
JPS57167656A (en) Manufacture of semiconductor device
JPS56160052A (en) Semiconductor device
JPS55117257A (en) Fabrication of semiconductor device
JPS5687346A (en) Manufacture of semiconductor device
JPS6421965A (en) Mos transistor
JPS57160156A (en) Semiconductor device
JPS5797643A (en) Manufacture of semiconductor device
JPS5753958A (en) Semiconductor device
JPS57147252A (en) Multilayer wiring method
JPS5544774A (en) Producing method for semiconductor device
JPS5743442A (en) Manufacture of semiconductor device
JPS5740957A (en) Manufacture of semiconductor device