JPS55138859A - Multilayer wiring type semiconductor device - Google Patents

Multilayer wiring type semiconductor device

Info

Publication number
JPS55138859A
JPS55138859A JP4616779A JP4616779A JPS55138859A JP S55138859 A JPS55138859 A JP S55138859A JP 4616779 A JP4616779 A JP 4616779A JP 4616779 A JP4616779 A JP 4616779A JP S55138859 A JPS55138859 A JP S55138859A
Authority
JP
Japan
Prior art keywords
film
wiring
semiconductor device
type semiconductor
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4616779A
Other languages
Japanese (ja)
Inventor
Masaru Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4616779A priority Critical patent/JPS55138859A/en
Publication of JPS55138859A publication Critical patent/JPS55138859A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To reduce the alkaline metallic ion contamination of the boundary between layers in a multilayer wiring type semiconductor device by forming a silicon nitride film between a wiring layer insulating film and lower layer wiring. CONSTITUTION:A main surface insulating film 2 is coated on a silicon substrate 1, and an impurity diffused element region 3 is formed in the substrate 1. An aluminum wire 4 is made contact with the region 3 and extended onto the film 2, and porous Al2O3 5 is formed to insulate between aluminum wires. A silicon nitride film 6 is formed on the upper surface of the aluminum film wiring region, and an SiO2 film 7 is formed as an insulating film between the wiring layers.
JP4616779A 1979-04-16 1979-04-16 Multilayer wiring type semiconductor device Pending JPS55138859A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4616779A JPS55138859A (en) 1979-04-16 1979-04-16 Multilayer wiring type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4616779A JPS55138859A (en) 1979-04-16 1979-04-16 Multilayer wiring type semiconductor device

Publications (1)

Publication Number Publication Date
JPS55138859A true JPS55138859A (en) 1980-10-30

Family

ID=12739451

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4616779A Pending JPS55138859A (en) 1979-04-16 1979-04-16 Multilayer wiring type semiconductor device

Country Status (1)

Country Link
JP (1) JPS55138859A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3228399A1 (en) * 1982-07-29 1984-02-02 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING A MONOLITHICALLY INTEGRATED CIRCUIT
JPS59218751A (en) * 1983-05-27 1984-12-10 Nec Corp Semiconductor device
US4561009A (en) * 1979-07-11 1985-12-24 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device
JPS62114231A (en) * 1985-11-14 1987-05-26 Fujitsu Ltd Semiconductor device
US5371047A (en) * 1992-10-30 1994-12-06 International Business Machines Corporation Chip interconnection having a breathable etch stop layer

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4561009A (en) * 1979-07-11 1985-12-24 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device
DE3228399A1 (en) * 1982-07-29 1984-02-02 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING A MONOLITHICALLY INTEGRATED CIRCUIT
JPS59218751A (en) * 1983-05-27 1984-12-10 Nec Corp Semiconductor device
JPS62114231A (en) * 1985-11-14 1987-05-26 Fujitsu Ltd Semiconductor device
JPH0738443B2 (en) * 1985-11-14 1995-04-26 富士通株式会社 Semiconductor device
US5371047A (en) * 1992-10-30 1994-12-06 International Business Machines Corporation Chip interconnection having a breathable etch stop layer

Similar Documents

Publication Publication Date Title
GB1523677A (en) Semiconductor device and a method for manufacturing the same
JPS55163860A (en) Manufacture of semiconductor device
JPS55138859A (en) Multilayer wiring type semiconductor device
JPS57100748A (en) Manufacture of semiconductor device
JPS5748249A (en) Semiconductor device
JPS5763842A (en) Preparation of semiconductor integrated circuit
JPS5513904A (en) Semiconductor device and its manufacturing method
JPS5740967A (en) Integrated circuit device
JPS56160052A (en) Semiconductor device
JPS55117257A (en) Fabrication of semiconductor device
JPS57160156A (en) Semiconductor device
JPS57103333A (en) Manufacture of semiconductor device
JPS5732654A (en) Semiconductor integrated circuit device
JPS5624939A (en) Manufacture of semiconductor device
JPS57114268A (en) Semiconductor device
JPS57157563A (en) Semiconductor device
JPS5685840A (en) Manufacture of semiconductor device
JPS5596673A (en) Semiconductor device
JPS55138857A (en) Semiconductor device
JPS575329A (en) Manufacture of semiconductor device
JPS5562760A (en) Semiconductor device
JPS6455852A (en) Semiconductor device
JPS57147253A (en) Manufacture of semiconductor device
JPS56138940A (en) Manufacture of semiconductor device
JPS6415964A (en) Manufacture of semiconductor integrated circuit device