JPS57100748A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57100748A JPS57100748A JP17682580A JP17682580A JPS57100748A JP S57100748 A JPS57100748 A JP S57100748A JP 17682580 A JP17682580 A JP 17682580A JP 17682580 A JP17682580 A JP 17682580A JP S57100748 A JPS57100748 A JP S57100748A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- glass
- semiconductor device
- spin
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To prevent the stepwise disconnection of an upper layer wire in an internal wire of a semiconductor device by laminating interlayer insulating layer between the upper and lower wires with an insulating laye formed by an ordinary vapor growth with a glass layer by a coating method and smoothening the surface. CONSTITUTION:An interlayer insulating layer 33 formed of SiO2 by a CVD method or the like is formed on a wiring pattern 32 formed of aluminum formed on a semiconductor substrate 31 formed of Si or the like and a glass layer 34 is coated by a spin-on glass method on the layer 33. Then, the stepwise part of the pattern 32 is charged to be smoothened. An SiO2 layer 35 is formed by a CVD method further thereon, and spin-on glass layer 34 is annealed by the heating in the step of coating the layer 35, and according no crack occurs. Eventually, the upper wiring layer 36 is formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17682580A JPS57100748A (en) | 1980-12-15 | 1980-12-15 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17682580A JPS57100748A (en) | 1980-12-15 | 1980-12-15 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57100748A true JPS57100748A (en) | 1982-06-23 |
Family
ID=16020493
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17682580A Pending JPS57100748A (en) | 1980-12-15 | 1980-12-15 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57100748A (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5911647A (en) * | 1982-07-12 | 1984-01-21 | Nec Corp | Semiconductor device and manufacture thereof |
JPS61102754A (en) * | 1984-10-26 | 1986-05-21 | Nec Corp | Semiconductor device |
JPS61216341A (en) * | 1985-03-20 | 1986-09-26 | Nec Kyushu Ltd | Manufacture of semiconductor device |
JPS6230335A (en) * | 1985-07-31 | 1987-02-09 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS62205630A (en) * | 1986-03-06 | 1987-09-10 | Seiko Epson Corp | Semiconductor device |
US4801560A (en) * | 1987-10-02 | 1989-01-31 | Motorola Inc. | Semiconductor processing utilizing carbon containing thick film spin-on glass |
JPH02166751A (en) * | 1988-12-21 | 1990-06-27 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
US5091340A (en) * | 1988-07-19 | 1992-02-25 | Nec Corporation | Method for forming multilayer wirings on a semiconductor device |
US5155576A (en) * | 1990-03-28 | 1992-10-13 | Nec Corporation | Semiconductor integrated circuit having a multilayer wiring structure |
US5293503A (en) * | 1991-09-11 | 1994-03-08 | Nec Corporation | Semiconductor device having multilayer metal interconnection |
US5399529A (en) * | 1992-05-27 | 1995-03-21 | Nec Corporation | Process for producing semiconductor devices |
US5420068A (en) * | 1991-09-27 | 1995-05-30 | Nec Corporation | Semiconductor integrated circuit and a method for manufacturing a fully planar multilayer wiring structure |
-
1980
- 1980-12-15 JP JP17682580A patent/JPS57100748A/en active Pending
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5911647A (en) * | 1982-07-12 | 1984-01-21 | Nec Corp | Semiconductor device and manufacture thereof |
JPS6362104B2 (en) * | 1982-07-12 | 1988-12-01 | ||
JPS61102754A (en) * | 1984-10-26 | 1986-05-21 | Nec Corp | Semiconductor device |
JPS61216341A (en) * | 1985-03-20 | 1986-09-26 | Nec Kyushu Ltd | Manufacture of semiconductor device |
JPS6230335A (en) * | 1985-07-31 | 1987-02-09 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS62205630A (en) * | 1986-03-06 | 1987-09-10 | Seiko Epson Corp | Semiconductor device |
US4801560A (en) * | 1987-10-02 | 1989-01-31 | Motorola Inc. | Semiconductor processing utilizing carbon containing thick film spin-on glass |
US5091340A (en) * | 1988-07-19 | 1992-02-25 | Nec Corporation | Method for forming multilayer wirings on a semiconductor device |
JPH02166751A (en) * | 1988-12-21 | 1990-06-27 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
US5155576A (en) * | 1990-03-28 | 1992-10-13 | Nec Corporation | Semiconductor integrated circuit having a multilayer wiring structure |
US5293503A (en) * | 1991-09-11 | 1994-03-08 | Nec Corporation | Semiconductor device having multilayer metal interconnection |
US5420068A (en) * | 1991-09-27 | 1995-05-30 | Nec Corporation | Semiconductor integrated circuit and a method for manufacturing a fully planar multilayer wiring structure |
US5399529A (en) * | 1992-05-27 | 1995-03-21 | Nec Corporation | Process for producing semiconductor devices |
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