JPS5789242A - Fabrication of semiconductor device - Google Patents

Fabrication of semiconductor device

Info

Publication number
JPS5789242A
JPS5789242A JP16563480A JP16563480A JPS5789242A JP S5789242 A JPS5789242 A JP S5789242A JP 16563480 A JP16563480 A JP 16563480A JP 16563480 A JP16563480 A JP 16563480A JP S5789242 A JPS5789242 A JP S5789242A
Authority
JP
Japan
Prior art keywords
insulation layer
layer
interconnection
deposited
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16563480A
Other languages
Japanese (ja)
Inventor
Iwao Higashinakagaha
Takahiko Moriya
Shohei Shima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16563480A priority Critical patent/JPS5789242A/en
Publication of JPS5789242A publication Critical patent/JPS5789242A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To form reliable multilayer interconnections by a procedure in which interconnection for a first insulation layer is formed by building an aluminum alloy layer on which other conductive layers are deposited. Next, pretreatment after forming a contact hole is made using diluted hydrofluoric acid. CONSTITUTION:The first insulation layer 13 of SiO2 is formed on a substrate of silicon 11 on which a diffused region 12 is deposited. On this first insulation layer, an Al-Si alloy layer 14 and an aluminum layer 15 are produced. Next, after making wet etching using phosphoric acid as principal constituent to form interconnection for the first insulation layer, a second insulation layer of SiO2 16 is deposited over the entire surface. The area except a contact hole for the first insulation layer interconnection and the substrate are covered with resist coating and contact holes 17 are formed by etching. After this, an Al-Si alloy layer is deposited for interconnection for the second insulation layer 18. This procedure allows conductive surfaces to be exposed on the contact holes for the second insulation layer to both the first insulation layer and the substrate by successful reproducibility.
JP16563480A 1980-11-25 1980-11-25 Fabrication of semiconductor device Pending JPS5789242A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16563480A JPS5789242A (en) 1980-11-25 1980-11-25 Fabrication of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16563480A JPS5789242A (en) 1980-11-25 1980-11-25 Fabrication of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5789242A true JPS5789242A (en) 1982-06-03

Family

ID=15816083

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16563480A Pending JPS5789242A (en) 1980-11-25 1980-11-25 Fabrication of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5789242A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0103855A2 (en) * 1982-09-20 1984-03-28 International Business Machines Corporation Process for integrated circuit metallization with low via resistance
JPS59208857A (en) * 1983-05-13 1984-11-27 Seiko Epson Corp Semiconductor device
JPH01212451A (en) * 1988-02-20 1989-08-25 Sony Corp Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0103855A2 (en) * 1982-09-20 1984-03-28 International Business Machines Corporation Process for integrated circuit metallization with low via resistance
JPS59208857A (en) * 1983-05-13 1984-11-27 Seiko Epson Corp Semiconductor device
JPH01212451A (en) * 1988-02-20 1989-08-25 Sony Corp Manufacture of semiconductor device

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