JPS5731155A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5731155A JPS5731155A JP10591980A JP10591980A JPS5731155A JP S5731155 A JPS5731155 A JP S5731155A JP 10591980 A JP10591980 A JP 10591980A JP 10591980 A JP10591980 A JP 10591980A JP S5731155 A JPS5731155 A JP S5731155A
- Authority
- JP
- Japan
- Prior art keywords
- patterns
- wiring
- thickness
- film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To improve formation accuracy of the upper layer wiring, by a method wherein an independent pattern having the same quality and thickness as those of the lower layer wiring patterns is formed on the lower insulating film between the lower layer wiring patterns, and a flat surface is obtained by stacking an interlayer insulating film. CONSTITUTION:Al wirings 15 connected to diffusion layers 11, 11' are formed by opening SiO2 on an Si substrate 14. At that time, an indepedent Al pattern 17 is provided between patterns 16 at the region where the interval (b) between the patterns 16 of the lower layer wiring 15 having twice or more the thickness T' of a layer PSG insulating film provided at the upper layer and the intervals (d') between the patterns 16 are made to have the width tiwce or less the thickness T of the layer PSG film provided at the upper layer. Next, with the layer PSG18 made, the concave sections between the patterns are completely buried, and a flat film 18 having desired thickness is also formed on the Al wirings 16, 17. An opening window 19 is selectively formed to make an Al wiring 20. The film 18 surface is flat, therefore the film thickness of the wiring 20 is equal, and the wiring can be formed with high accuracy.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10591980A JPS5731155A (en) | 1980-07-31 | 1980-07-31 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10591980A JPS5731155A (en) | 1980-07-31 | 1980-07-31 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5731155A true JPS5731155A (en) | 1982-02-19 |
Family
ID=14420265
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10591980A Pending JPS5731155A (en) | 1980-07-31 | 1980-07-31 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5731155A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57105685U (en) * | 1980-12-22 | 1982-06-29 | ||
JPS5968951A (en) * | 1982-10-12 | 1984-04-19 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
JPS5986247A (en) * | 1982-11-08 | 1984-05-18 | Matsushita Electronics Corp | Manufacture of semiconductor device |
JPS59114838A (en) * | 1982-12-22 | 1984-07-03 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS59169151A (en) * | 1983-03-17 | 1984-09-25 | Toshiba Corp | Manufacture of semiconductor device |
JPS6364340A (en) * | 1986-09-05 | 1988-03-22 | Hitachi Ltd | Interconnection structure effective for improving flatness of organic interlayer film |
JPS63172444A (en) * | 1987-01-10 | 1988-07-16 | Toshiba Corp | Manufacture of semiconductor device |
-
1980
- 1980-07-31 JP JP10591980A patent/JPS5731155A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57105685U (en) * | 1980-12-22 | 1982-06-29 | ||
JPS6226791Y2 (en) * | 1980-12-22 | 1987-07-09 | ||
JPS5968951A (en) * | 1982-10-12 | 1984-04-19 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
JPS5986247A (en) * | 1982-11-08 | 1984-05-18 | Matsushita Electronics Corp | Manufacture of semiconductor device |
JPS59114838A (en) * | 1982-12-22 | 1984-07-03 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS59169151A (en) * | 1983-03-17 | 1984-09-25 | Toshiba Corp | Manufacture of semiconductor device |
JPH0563940B2 (en) * | 1983-03-17 | 1993-09-13 | Tokyo Shibaura Electric Co | |
JPS6364340A (en) * | 1986-09-05 | 1988-03-22 | Hitachi Ltd | Interconnection structure effective for improving flatness of organic interlayer film |
JPS63172444A (en) * | 1987-01-10 | 1988-07-16 | Toshiba Corp | Manufacture of semiconductor device |
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