JPS56153751A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56153751A JPS56153751A JP5677480A JP5677480A JPS56153751A JP S56153751 A JPS56153751 A JP S56153751A JP 5677480 A JP5677480 A JP 5677480A JP 5677480 A JP5677480 A JP 5677480A JP S56153751 A JPS56153751 A JP S56153751A
- Authority
- JP
- Japan
- Prior art keywords
- film
- nitride film
- wiring layer
- sio2
- thereafter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To prevent the beaks and short circuits of wires, and to improve water resisting property and dielectric strength by providing a wiring layer on an triply layered interlayer insulating film comprising a phosphrous glass layer, an Si nitride film, and an SiO2 film containing phosphorus. CONSTITUTION:The first contact holes are provided in a PSG film 9 in a process of forming an Si gate type FET, and the difference in steps is moderated by heat treatment. Thereafter the Si nitride film 120 is formed. Then, the SiO2 film 113 containing 1-7mol% of phosphorus is deposited thereon. Then, second contact holes 14-16 are perforated in the SiO2 film 113, and the Si nitride film 120 at the hole parts is removed. Thereafter, wiring layer patterns 17-19 comprising, e.g., Al is formed thereon. Thus, the undercut of the PSG film 9 can be eliminated, and the breaks and the like of the Al wiring layer can be prevented. Since the Si nitride film and the SiO2 film containing phosphorus are provided, the water resisting property and the dielectric strength can be improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5677480A JPS56153751A (en) | 1980-04-28 | 1980-04-28 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5677480A JPS56153751A (en) | 1980-04-28 | 1980-04-28 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56153751A true JPS56153751A (en) | 1981-11-27 |
JPS6150385B2 JPS6150385B2 (en) | 1986-11-04 |
Family
ID=13036801
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5677480A Granted JPS56153751A (en) | 1980-04-28 | 1980-04-28 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56153751A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0191439A (en) * | 1987-06-18 | 1989-04-11 | Seiko Instr & Electron Ltd | Semiconductor device |
US5780364A (en) * | 1994-12-12 | 1998-07-14 | Micron Technology, Inc. | Method to cure mobile ion contamination in semiconductor processing |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5268388A (en) * | 1975-12-05 | 1977-06-07 | Nec Corp | Semiconductor integrated circuit |
JPS52113161A (en) * | 1976-03-19 | 1977-09-22 | Hitachi Ltd | Semiconductor device |
-
1980
- 1980-04-28 JP JP5677480A patent/JPS56153751A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5268388A (en) * | 1975-12-05 | 1977-06-07 | Nec Corp | Semiconductor integrated circuit |
JPS52113161A (en) * | 1976-03-19 | 1977-09-22 | Hitachi Ltd | Semiconductor device |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0191439A (en) * | 1987-06-18 | 1989-04-11 | Seiko Instr & Electron Ltd | Semiconductor device |
US5780364A (en) * | 1994-12-12 | 1998-07-14 | Micron Technology, Inc. | Method to cure mobile ion contamination in semiconductor processing |
US5943602A (en) * | 1994-12-12 | 1999-08-24 | Micron Technology, Inc. | Method to cure mobile ion contamination in semiconductor processing |
US6114222A (en) * | 1994-12-12 | 2000-09-05 | Micron Technology, Inc. | Method to cure mobile ion contamination in semiconductor processing |
Also Published As
Publication number | Publication date |
---|---|
JPS6150385B2 (en) | 1986-11-04 |
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