JPS56153751A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56153751A
JPS56153751A JP5677480A JP5677480A JPS56153751A JP S56153751 A JPS56153751 A JP S56153751A JP 5677480 A JP5677480 A JP 5677480A JP 5677480 A JP5677480 A JP 5677480A JP S56153751 A JPS56153751 A JP S56153751A
Authority
JP
Japan
Prior art keywords
film
nitride film
wiring layer
sio2
thereafter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5677480A
Other languages
Japanese (ja)
Other versions
JPS6150385B2 (en
Inventor
Haruo Amano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5677480A priority Critical patent/JPS56153751A/en
Publication of JPS56153751A publication Critical patent/JPS56153751A/en
Publication of JPS6150385B2 publication Critical patent/JPS6150385B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE:To prevent the beaks and short circuits of wires, and to improve water resisting property and dielectric strength by providing a wiring layer on an triply layered interlayer insulating film comprising a phosphrous glass layer, an Si nitride film, and an SiO2 film containing phosphorus. CONSTITUTION:The first contact holes are provided in a PSG film 9 in a process of forming an Si gate type FET, and the difference in steps is moderated by heat treatment. Thereafter the Si nitride film 120 is formed. Then, the SiO2 film 113 containing 1-7mol% of phosphorus is deposited thereon. Then, second contact holes 14-16 are perforated in the SiO2 film 113, and the Si nitride film 120 at the hole parts is removed. Thereafter, wiring layer patterns 17-19 comprising, e.g., Al is formed thereon. Thus, the undercut of the PSG film 9 can be eliminated, and the breaks and the like of the Al wiring layer can be prevented. Since the Si nitride film and the SiO2 film containing phosphorus are provided, the water resisting property and the dielectric strength can be improved.
JP5677480A 1980-04-28 1980-04-28 Semiconductor device Granted JPS56153751A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5677480A JPS56153751A (en) 1980-04-28 1980-04-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5677480A JPS56153751A (en) 1980-04-28 1980-04-28 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56153751A true JPS56153751A (en) 1981-11-27
JPS6150385B2 JPS6150385B2 (en) 1986-11-04

Family

ID=13036801

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5677480A Granted JPS56153751A (en) 1980-04-28 1980-04-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56153751A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0191439A (en) * 1987-06-18 1989-04-11 Seiko Instr & Electron Ltd Semiconductor device
US5780364A (en) * 1994-12-12 1998-07-14 Micron Technology, Inc. Method to cure mobile ion contamination in semiconductor processing

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5268388A (en) * 1975-12-05 1977-06-07 Nec Corp Semiconductor integrated circuit
JPS52113161A (en) * 1976-03-19 1977-09-22 Hitachi Ltd Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5268388A (en) * 1975-12-05 1977-06-07 Nec Corp Semiconductor integrated circuit
JPS52113161A (en) * 1976-03-19 1977-09-22 Hitachi Ltd Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0191439A (en) * 1987-06-18 1989-04-11 Seiko Instr & Electron Ltd Semiconductor device
US5780364A (en) * 1994-12-12 1998-07-14 Micron Technology, Inc. Method to cure mobile ion contamination in semiconductor processing
US5943602A (en) * 1994-12-12 1999-08-24 Micron Technology, Inc. Method to cure mobile ion contamination in semiconductor processing
US6114222A (en) * 1994-12-12 2000-09-05 Micron Technology, Inc. Method to cure mobile ion contamination in semiconductor processing

Also Published As

Publication number Publication date
JPS6150385B2 (en) 1986-11-04

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