JPS5788735A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS5788735A
JPS5788735A JP55164126A JP16412680A JPS5788735A JP S5788735 A JPS5788735 A JP S5788735A JP 55164126 A JP55164126 A JP 55164126A JP 16412680 A JP16412680 A JP 16412680A JP S5788735 A JPS5788735 A JP S5788735A
Authority
JP
Japan
Prior art keywords
layer
phosphorus
window
layers
higher density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55164126A
Other languages
Japanese (ja)
Inventor
Yoshimi Shiotani
Shuichi Miyamoto
Osamu Anzai
Masumi Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55164126A priority Critical patent/JPS5788735A/en
Publication of JPS5788735A publication Critical patent/JPS5788735A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Abstract

PURPOSE:To enable formation of an electrode window having a gently-sloping opening part without increasing the density of phosphorus of an insulator film by a method wherein the insulator film composed of a plurality of phosphate silica glass layers of which the more upper layer has the higher density of phosphorus is formed on a semiconductor substrate. CONSTITUTION:On the semiconductor substrate 5 whereon the formation of a gate oxide film 7, a gate electrode 8, source and drain regions 9 and 10, etc. is completed, phosphate silica glass layers 11-13 are formed sequentially. These layers 11-13 are formed in such a manner that the more upper layer has the higher density of phosphorus. Next, after a photoresist pattern 17 is formed on the insulator film 15 composed of the layers 11-13, the electrode window 2 is formed in the film 15. On the occasion of etching for forming the window, side etching advances the more at the PSG layer which has the higher density of phosphorus, and in the window 2 thus formed, a gently-sloping terraced opening part 3 wherein the region of the layer 13 is the broadest and that of the layer 11 is the narrowest is formed. Then, the pattern 17 being removed, a polycrystalline Si layer 18 and an Al wiring 4 are formed.
JP55164126A 1980-11-21 1980-11-21 Preparation of semiconductor device Pending JPS5788735A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55164126A JPS5788735A (en) 1980-11-21 1980-11-21 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55164126A JPS5788735A (en) 1980-11-21 1980-11-21 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5788735A true JPS5788735A (en) 1982-06-02

Family

ID=15787234

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55164126A Pending JPS5788735A (en) 1980-11-21 1980-11-21 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5788735A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6362352A (en) * 1986-09-03 1988-03-18 Matsushita Electronics Corp Manufacture of semiconductor device
JPS6425551A (en) * 1987-07-22 1989-01-27 Toshiba Corp Semiconductor device
US5041397A (en) * 1988-06-30 1991-08-20 Samsung Electronics Co., Ltd. Method of fabricating a semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6362352A (en) * 1986-09-03 1988-03-18 Matsushita Electronics Corp Manufacture of semiconductor device
JPS6425551A (en) * 1987-07-22 1989-01-27 Toshiba Corp Semiconductor device
US5041397A (en) * 1988-06-30 1991-08-20 Samsung Electronics Co., Ltd. Method of fabricating a semiconductor device

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