JPS6457673A - Manufacture of thin film transistor - Google Patents

Manufacture of thin film transistor

Info

Publication number
JPS6457673A
JPS6457673A JP62212753A JP21275387A JPS6457673A JP S6457673 A JPS6457673 A JP S6457673A JP 62212753 A JP62212753 A JP 62212753A JP 21275387 A JP21275387 A JP 21275387A JP S6457673 A JPS6457673 A JP S6457673A
Authority
JP
Japan
Prior art keywords
semiconductor film
film
drain electrode
mask
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62212753A
Other languages
Japanese (ja)
Other versions
JP2574808B2 (en
Inventor
Akira Sasano
Yasuo Tanaka
Haruo Matsumaru
Ken Tsutsui
Toshihisa Tsukada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62212753A priority Critical patent/JP2574808B2/en
Publication of JPS6457673A publication Critical patent/JPS6457673A/en
Application granted granted Critical
Publication of JP2574808B2 publication Critical patent/JP2574808B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To enable the conventional thin film transistor to be manufactured using a smaller number of masks by a method wherein two semiconductor films are processed using an integrated source.drain electrode pattern as a mask while another semiconductor film with impurity-doped channel part is removed using a transparent electrode pattern as a mask. CONSTITUTION:A semiconductor film 4 and an impurity-doped semiconductor film 5 are processed using an integrated source.drain electrode pattern 5 as a mask and then the semiconductor film 5 with impurity-doped channel part is removed using a transparent electrode 7 as a mask. For example after forming a gate electrode 2 as a glass substrate 1, a gate insulating film 3, a semiconductor film 4 and the semiconductor film 5 doped with impurity are deposited and furthermore the metallic film 6 for source.drain electrode is laminated. Next, the source.drain electrode film 6 comprising integrated source.drain electrode, the doped semiconductor film 5 and the semiconductor film 4 are patterned. Finally, the transparent electrode 7 is formed to remove the source.drain electrode metallic film 6 of channel part and the doped semiconductor film 5 using the transparent electrode 7 as a mask.
JP62212753A 1987-08-28 1987-08-28 Method for manufacturing thin film transistor Expired - Fee Related JP2574808B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62212753A JP2574808B2 (en) 1987-08-28 1987-08-28 Method for manufacturing thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62212753A JP2574808B2 (en) 1987-08-28 1987-08-28 Method for manufacturing thin film transistor

Publications (2)

Publication Number Publication Date
JPS6457673A true JPS6457673A (en) 1989-03-03
JP2574808B2 JP2574808B2 (en) 1997-01-22

Family

ID=16627844

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62212753A Expired - Fee Related JP2574808B2 (en) 1987-08-28 1987-08-28 Method for manufacturing thin film transistor

Country Status (1)

Country Link
JP (1) JP2574808B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996002867A1 (en) * 1994-07-14 1996-02-01 Citizen Watch Co., Ltd. Liquid crystal display and method of manufacturing the same
US5578027A (en) * 1993-09-17 1996-11-26 Pall Corporation Method and system for collecting, processing, and storing blood components
US6132124A (en) * 1993-08-31 2000-10-17 Mitsubishi Pencil Kabushiki Kaisha Ink follower for aqueous ballpoint pen using gel-like material and solid piece

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6132124A (en) * 1993-08-31 2000-10-17 Mitsubishi Pencil Kabushiki Kaisha Ink follower for aqueous ballpoint pen using gel-like material and solid piece
US5578027A (en) * 1993-09-17 1996-11-26 Pall Corporation Method and system for collecting, processing, and storing blood components
US5578028A (en) * 1993-09-17 1996-11-26 Pall Corporation Method and system for collecting, processing, and storing blood components
US6045546A (en) * 1993-09-17 2000-04-04 Pall Corporation Method and system for collecting, processing, and storing blood components
WO1996002867A1 (en) * 1994-07-14 1996-02-01 Citizen Watch Co., Ltd. Liquid crystal display and method of manufacturing the same
GB2306747A (en) * 1994-07-14 1997-05-07 Citizen Watch Co Ltd Liquid crystal display and method of manufacturing the same
GB2306747B (en) * 1994-07-14 1998-07-01 Citizen Watch Co Ltd Liquid crystal display and method of manufacturing the same
US5893621A (en) * 1994-07-14 1999-04-13 Citizen Watch Co., Ltd. Liquid crystal display and method of manufacturing the same
US6512556B1 (en) 1994-07-14 2003-01-28 Citizen Watch Co., Ltd. Liquid crystal display and method of manufacturing the same

Also Published As

Publication number Publication date
JP2574808B2 (en) 1997-01-22

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees