JPS5599777A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5599777A JPS5599777A JP711179A JP711179A JPS5599777A JP S5599777 A JPS5599777 A JP S5599777A JP 711179 A JP711179 A JP 711179A JP 711179 A JP711179 A JP 711179A JP S5599777 A JPS5599777 A JP S5599777A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- silicon
- poly
- contact
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To achieve high-density integration without increasing working processes, by forming a contact of a drain or source region by using the 2nd layer silicon other than a gate wiring.
CONSTITUTION: First, the process of forming rate insulating silicon oxide film 16 on the surface of a substrate is completed. Next, after the 1st layer poly-silicon being deposited on film 16, gate forming poly-silicon layer 40 of pattern 40 is formed. By using layer 40 as a mask, N+-type source region 44 and an N+-type drain region are formed. Next, etched part 50, including a contact hole, is formed. Then, after the 2nd layer poly-silicon being deposited on the upper surface of the substrate by the CVD method, source-wiring and capacitor-electrode-forming poly-silicon layers 52A and 52B are formed by using patterns 52A and 52B. Layers 52A and 52B are made low resistance layers by doping them with a high concentration donor impurity, and at the same time, corresonding to the contact hole of etched part 50, N+-type contact region 54 is formed. By this, it makes unnecessary to provide a separation gap between the contact part of layer 52A and film 16.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP711179A JPS5599777A (en) | 1979-01-26 | 1979-01-26 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP711179A JPS5599777A (en) | 1979-01-26 | 1979-01-26 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5599777A true JPS5599777A (en) | 1980-07-30 |
Family
ID=11656969
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP711179A Pending JPS5599777A (en) | 1979-01-26 | 1979-01-26 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5599777A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006281160A (en) * | 2005-04-04 | 2006-10-19 | Takuma Co Ltd | Waste sorting device |
-
1979
- 1979-01-26 JP JP711179A patent/JPS5599777A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006281160A (en) * | 2005-04-04 | 2006-10-19 | Takuma Co Ltd | Waste sorting device |
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