JPS6430264A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To decrease the processes in number by a method wherein a selfaligned bipolar transistor is manufactured by making advantage of a dummy pattern of a nitride film selectively left unremoved on a region of a semiconductor layer or a substrate. CONSTITUTION:An epitaxial layer 2 and a field oxide film 3 are formed on a silicon substrate 1, a CVU-Si3N4 film is built on the whole face after an n<+> buried layer 5 is deposited, patterning is performed onto the Si3N4 film through the use of a resist, and a nitride film 20 is left unremoved as a dummy pattern. And, a CVU is laid on the whole face as the resist used for the pattering of the bitride film 20 is left unremoved, the CVD on the resist is removed through a lift-off, then a CVD-SiO2 is coated thereon, an oxide film 21 is left through an anisotropic ion etching. In addition, poly-silicon is deposited so as to make the upper face of the poly-silicon layer 22 level with those of the nitride film 20 and the oxide film 21, the dry control etching is performed through the use of resist. By these processes, the processes ranging from providing a window for an emitter to the formation of an emitter electrode are made to decreased in number and a defective conductivity between an outer and an inner base can be prevented.