JPS5768067A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5768067A JPS5768067A JP14383480A JP14383480A JPS5768067A JP S5768067 A JPS5768067 A JP S5768067A JP 14383480 A JP14383480 A JP 14383480A JP 14383480 A JP14383480 A JP 14383480A JP S5768067 A JPS5768067 A JP S5768067A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- base
- emitter
- film
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 150000002500 ions Chemical class 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To improve the performance and the reliability of a semiconductor device by forming a semiconductor layer of inverted trapezoidal shape on a base layer on the semiconductor of a collector layer, diffusing therfrom a base layer and then simultaneously forming base and emitter electrode windows. CONSTITUTION:Polysilicon layers 4A, 4B and emitter pattern SiO2 film 5 are formed on the main surface of an Si substrate 1 formed with a base layer 2, and with them as masks the polysilicon is formed in an inverted trapezoidal shape. An ion injection layer 19' of an acceptor is formed at the base connection part vertically from above. The film 5 is removed, an SiO2 film 16 is newly covered thereon, is heat treated, and an emitter layer 8 and a base connection layer 19 are formed. Subsequently, an Si3N4 film 17 is formed, ions are injected vertically to selectively etch the film 17 of ion injected part, a hole is opened at the SiO2 film 16 with the Si3N4 mask 17, and emitter and base electrode windows are simultaneously formed. Thereafter, aluminum is vertically deposited. With this structure, emitter and base junction is not exposed, thereby remarkably improving the deterioration or decrease in the linearity of the hFE.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14383480A JPS5768067A (en) | 1980-10-15 | 1980-10-15 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14383480A JPS5768067A (en) | 1980-10-15 | 1980-10-15 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5768067A true JPS5768067A (en) | 1982-04-26 |
Family
ID=15348022
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14383480A Pending JPS5768067A (en) | 1980-10-15 | 1980-10-15 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5768067A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6233457A (en) * | 1985-08-06 | 1987-02-13 | Nec Corp | Semiconductor integrated circuit device |
-
1980
- 1980-10-15 JP JP14383480A patent/JPS5768067A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6233457A (en) * | 1985-08-06 | 1987-02-13 | Nec Corp | Semiconductor integrated circuit device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5768067A (en) | Manufacture of semiconductor device | |
| JPS5688358A (en) | Manufacture of semiconductor device | |
| JPS5642367A (en) | Manufacture of bipolar integrated circuit | |
| JPS56130960A (en) | Manufacture of semiconductor integrated circuit | |
| JPS57109365A (en) | Semiconductor ic device | |
| JPS5769776A (en) | Semiconductor device and manufacture thereof | |
| JPS5748239A (en) | Manufacture of semiconductor device | |
| JPS56157025A (en) | Manufacture of semiconductor device | |
| JPS57176764A (en) | Manufacture of semiconductor device | |
| JPS5642373A (en) | Manufacture of semiconductor device | |
| JPS56165338A (en) | Semiconductor device and manufacture thereof | |
| JPS6430264A (en) | Manufacture of semiconductor device | |
| JPS5513953A (en) | Complementary integrated circuit | |
| JPS5791537A (en) | Manufacture of semiconductor device | |
| JPS56126957A (en) | Manufacture of semiconductor device | |
| JPS5779670A (en) | Manufacture of semiconductor device | |
| JPS56111240A (en) | Semiconductor device and manufacture thereof | |
| JPS5721861A (en) | Manufacture of semiconductor device | |
| JPS5693315A (en) | Manufacture of semiconductor device | |
| JPS5776873A (en) | Manufacture of semiconductor device | |
| JPS5759379A (en) | Manufacture of semiconductor device | |
| JPS5492180A (en) | Manufacture of semiconductor device | |
| JPS5759378A (en) | Manufacture of semiconductor device | |
| JPS5526637A (en) | Manufacturing of semiconductor device | |
| JPS5745950A (en) | Manufacture of semiconductor device |