JPS5759378A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5759378A JPS5759378A JP13454780A JP13454780A JPS5759378A JP S5759378 A JPS5759378 A JP S5759378A JP 13454780 A JP13454780 A JP 13454780A JP 13454780 A JP13454780 A JP 13454780A JP S5759378 A JPS5759378 A JP S5759378A
- Authority
- JP
- Japan
- Prior art keywords
- resisting material
- oxidation resisting
- film
- constitution
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 abstract 4
- 230000003647 oxidation Effects 0.000 abstract 3
- 238000007254 oxidation reaction Methods 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229920005591 polysilicon Polymers 0.000 abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Abstract
PURPOSE:To improve reliability,, by selectively depositing an oxidation resisting material on the surface of a semiconductor after ion implantation, selectivly oxidizing the semiconductor with said material as a mask, removing the oxidation resisting material, and forming an electrode on the semiconducotor. CONSTITUTION:In the case an emitter region 6 is formed by implanting impurity ions through a polysilicon layer 2, the oxidation resisting material such as silicon nitride is deposited on the polysilicon layer 2 after ion implantation. An unnecessary oxide film 12 is washed out with hydrofluoric acid type solvent, finally necessary wiring is formed. In the Figure, 3 is a photoresist film, 4 is a silicon dioxide film, and 8 is a silicon nitride film. In this constitution, the short circuit between the emitter region 6 and a base region 5 due to the reaction between aluminum wiring 7 and a silicon substrate 1, and known problems caused by the etching of the polysilicon laer can be avoided, and the reliablity can be improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13454780A JPS5759378A (en) | 1980-09-27 | 1980-09-27 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13454780A JPS5759378A (en) | 1980-09-27 | 1980-09-27 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5759378A true JPS5759378A (en) | 1982-04-09 |
Family
ID=15130861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13454780A Pending JPS5759378A (en) | 1980-09-27 | 1980-09-27 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5759378A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6026514U (en) * | 1983-07-29 | 1985-02-22 | ミサワホ−ム株式会社 | Roof panel mounting structure |
| JPS6221261A (en) * | 1985-07-16 | 1987-01-29 | エツセ・ジ・エツセ・ミクロエレツトロニ−カ・エツセ・ピ・ア | Driving element |
-
1980
- 1980-09-27 JP JP13454780A patent/JPS5759378A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6026514U (en) * | 1983-07-29 | 1985-02-22 | ミサワホ−ム株式会社 | Roof panel mounting structure |
| JPS6221261A (en) * | 1985-07-16 | 1987-01-29 | エツセ・ジ・エツセ・ミクロエレツトロニ−カ・エツセ・ピ・ア | Driving element |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5799777A (en) | Metal oxide semiconductor type semiconductor device | |
| JPS577959A (en) | Semiconductor device | |
| EP0070499A2 (en) | A method of producing a semiconductor device | |
| JPS5759378A (en) | Manufacture of semiconductor device | |
| JPS54154967A (en) | Semiconductor electronic device | |
| JPS57186339A (en) | Etching method for silicon | |
| JPS5575238A (en) | Method of fabricating semiconductor device | |
| JPS55157241A (en) | Manufacture of semiconductor device | |
| JPS56111264A (en) | Manufacture of semiconductor device | |
| JPS6411343A (en) | Manufacture of semiconductor device | |
| JPS57173956A (en) | Manufacture of semiconductor device | |
| JPS5559778A (en) | Method of fabricating semiconductor device | |
| JPS5728352A (en) | Semiconductor integrated circuit and manufacture thereof | |
| JPS56133844A (en) | Semiconductor device | |
| JPS56129371A (en) | Manufacture of semiconductor ic device | |
| JPS6441245A (en) | Manufacture of semiconductor device | |
| JPS561546A (en) | Manufacture of integrated circuit device | |
| JPS5522878A (en) | Insulation gate type field effect semiconductor device | |
| JPS5753957A (en) | Manufacture of semiconductor device | |
| JPS5688352A (en) | Manufacture of semiconductor integrated circuit | |
| JPS6421940A (en) | Manufacture of semiconductor device | |
| JPS6424456A (en) | Manufacture of semiconductor device | |
| JPS56125852A (en) | Manufacture of semiconductor device | |
| JPS56107553A (en) | Semiconductor device and preparation thereof | |
| JPS62235783A (en) | Manufacture of field-effect transistor |