JPS56107553A - Semiconductor device and preparation thereof - Google Patents
Semiconductor device and preparation thereofInfo
- Publication number
- JPS56107553A JPS56107553A JP906580A JP906580A JPS56107553A JP S56107553 A JPS56107553 A JP S56107553A JP 906580 A JP906580 A JP 906580A JP 906580 A JP906580 A JP 906580A JP S56107553 A JPS56107553 A JP S56107553A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- electrode
- opening
- base
- attach
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain miniaturized integrated circuit with minute electrode wiring free from ruggedness by a construction wherein an opening for an electrode and a concave portion for containing wiring are provided on an insulating film of a semiconductor substrate with a semiconductor region, and a metal is allowed to attach to the opening to provide the electrode wiring. CONSTITUTION:In a bipolar transistor, for instance, a thin oxide film 2' is made to attach to the base region on the main surface of a semiconductor substrate having collector, base and emitter regions 1, 3, 4, while a thick oxide film 2 is permitted to adhere to the periphery of the base region. Next, with a photoresist pattern 11 as a mask, an opening 6 for the emitter electrode, an opening 5 for the base electrode and a concave portion 12 in which wiring is provided are made through chemical etching. After depositing wiring metal layers 13, 13', the photoresist pattern 11 together with the metal layer 13' on the pattern are removed. By so doing, spacing between the openings of electrodes can be reduced, while a wiring layer with less ruggedness is produced, so that a compact transistor with a small parasitic capacity is obtainable.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP906580A JPS56107553A (en) | 1980-01-29 | 1980-01-29 | Semiconductor device and preparation thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP906580A JPS56107553A (en) | 1980-01-29 | 1980-01-29 | Semiconductor device and preparation thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56107553A true JPS56107553A (en) | 1981-08-26 |
JPS6325716B2 JPS6325716B2 (en) | 1988-05-26 |
Family
ID=11710203
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP906580A Granted JPS56107553A (en) | 1980-01-29 | 1980-01-29 | Semiconductor device and preparation thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56107553A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007255936A (en) * | 2006-03-20 | 2007-10-04 | Horiba Ltd | Sample solution dropping/cleaning device and sample solution dropping/cleaning method |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5110064A (en) * | 1974-07-11 | 1976-01-27 | Takao Nishikawa | KOKUMOTSUSENBETSUSOCHI |
JPS5267962A (en) * | 1975-12-03 | 1977-06-06 | Sanyo Electric Co Ltd | Manufacture of semiconductor unit |
JPS5578532A (en) * | 1978-12-07 | 1980-06-13 | Matsushita Electronics Corp | Formation of electrode for semiconductor device |
-
1980
- 1980-01-29 JP JP906580A patent/JPS56107553A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5110064A (en) * | 1974-07-11 | 1976-01-27 | Takao Nishikawa | KOKUMOTSUSENBETSUSOCHI |
JPS5267962A (en) * | 1975-12-03 | 1977-06-06 | Sanyo Electric Co Ltd | Manufacture of semiconductor unit |
JPS5578532A (en) * | 1978-12-07 | 1980-06-13 | Matsushita Electronics Corp | Formation of electrode for semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007255936A (en) * | 2006-03-20 | 2007-10-04 | Horiba Ltd | Sample solution dropping/cleaning device and sample solution dropping/cleaning method |
Also Published As
Publication number | Publication date |
---|---|
JPS6325716B2 (en) | 1988-05-26 |
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