JPS5721854A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5721854A
JPS5721854A JP9708280A JP9708280A JPS5721854A JP S5721854 A JPS5721854 A JP S5721854A JP 9708280 A JP9708280 A JP 9708280A JP 9708280 A JP9708280 A JP 9708280A JP S5721854 A JPS5721854 A JP S5721854A
Authority
JP
Japan
Prior art keywords
distance
type
region
injector
high density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9708280A
Other languages
Japanese (ja)
Inventor
Tsutomu Fujita
Haruyasu Yamada
Toyoki Takemoto
Tadanaka Yoneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9708280A priority Critical patent/JPS5721854A/en
Publication of JPS5721854A publication Critical patent/JPS5721854A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To perform stable operation over wide current range in a semiconductor device of IIL by increasing the distance between the high density external base region and low density injector. CONSTITUTION:An n type low emitter region 2, an n<+> type buried layer 3 and an emitter contacting region 4 are formed on a p type silicon substrate 1, and a p<-> type active base region 11a, a part 11b of a low density injector, a p type high density external base region 12a, a part 12b of a high density injector, and an n type collector region 13 are further formed thereon. The distance l2 between the regions 11b and 11a is set at 6mum, and the distance l1 between the regions 12b and 12a is set at 2mum in such a manner that the distance l2 is longer than the distance l1.
JP9708280A 1980-07-15 1980-07-15 Semiconductor device Pending JPS5721854A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9708280A JPS5721854A (en) 1980-07-15 1980-07-15 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9708280A JPS5721854A (en) 1980-07-15 1980-07-15 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5721854A true JPS5721854A (en) 1982-02-04

Family

ID=14182713

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9708280A Pending JPS5721854A (en) 1980-07-15 1980-07-15 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5721854A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4826780A (en) * 1982-04-19 1989-05-02 Matsushita Electric Industrial Co., Ltd. Method of making bipolar transistors

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5247383A (en) * 1975-10-13 1977-04-15 Toshiba Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5247383A (en) * 1975-10-13 1977-04-15 Toshiba Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4826780A (en) * 1982-04-19 1989-05-02 Matsushita Electric Industrial Co., Ltd. Method of making bipolar transistors

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