JPS5766667A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5766667A JPS5766667A JP14173880A JP14173880A JPS5766667A JP S5766667 A JPS5766667 A JP S5766667A JP 14173880 A JP14173880 A JP 14173880A JP 14173880 A JP14173880 A JP 14173880A JP S5766667 A JPS5766667 A JP S5766667A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mesa
- forming
- type diffused
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 239000012212 insulator Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42308—Gate electrodes for thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To prevent the shortcircuit in a wide semiconductor layer region of a semiconductor device by not forming an electrode at the relatively wide part of the region of a semiconductor layer at the bottom of a mesa type valley part and forming an insulator layer on the semiconductor layer. CONSTITUTION:A p type diffused layer is used as an anode 21, an n type diffused layer is formed thereon to form a base 22, and a p type diffused layer is formed to construct a gate 23. An n<+> type diffused layer is formed on the gate 23, and a cathode 24 is formed by mesa etching. An oxidized film 25 is formed on the mesa surface, and then the film 25 of the parts forming a cathode electrode corresponding to the top of the mesa structure and forming a gate electrode corresponding to the bottom of the mesa structure valley part are selectively etched. Then, cathode electrode 28 and gate electrode 27 are formed, an insulator layer 29 is then formed, and the part on the cathode electrode is selectively etched.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14173880A JPS5766667A (en) | 1980-10-09 | 1980-10-09 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14173880A JPS5766667A (en) | 1980-10-09 | 1980-10-09 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5766667A true JPS5766667A (en) | 1982-04-22 |
JPS6122869B2 JPS6122869B2 (en) | 1986-06-03 |
Family
ID=15299049
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14173880A Granted JPS5766667A (en) | 1980-10-09 | 1980-10-09 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5766667A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0146928A2 (en) * | 1983-12-21 | 1985-07-03 | Kabushiki Kaisha Toshiba | Power semiconductor device with mesa type structure |
-
1980
- 1980-10-09 JP JP14173880A patent/JPS5766667A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0146928A2 (en) * | 1983-12-21 | 1985-07-03 | Kabushiki Kaisha Toshiba | Power semiconductor device with mesa type structure |
Also Published As
Publication number | Publication date |
---|---|
JPS6122869B2 (en) | 1986-06-03 |
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