JPS5766667A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5766667A
JPS5766667A JP14173880A JP14173880A JPS5766667A JP S5766667 A JPS5766667 A JP S5766667A JP 14173880 A JP14173880 A JP 14173880A JP 14173880 A JP14173880 A JP 14173880A JP S5766667 A JPS5766667 A JP S5766667A
Authority
JP
Japan
Prior art keywords
layer
mesa
forming
type diffused
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14173880A
Other languages
Japanese (ja)
Other versions
JPS6122869B2 (en
Inventor
Yasumasa Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14173880A priority Critical patent/JPS5766667A/en
Publication of JPS5766667A publication Critical patent/JPS5766667A/en
Publication of JPS6122869B2 publication Critical patent/JPS6122869B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308—Gate electrodes for thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To prevent the shortcircuit in a wide semiconductor layer region of a semiconductor device by not forming an electrode at the relatively wide part of the region of a semiconductor layer at the bottom of a mesa type valley part and forming an insulator layer on the semiconductor layer. CONSTITUTION:A p type diffused layer is used as an anode 21, an n type diffused layer is formed thereon to form a base 22, and a p type diffused layer is formed to construct a gate 23. An n<+> type diffused layer is formed on the gate 23, and a cathode 24 is formed by mesa etching. An oxidized film 25 is formed on the mesa surface, and then the film 25 of the parts forming a cathode electrode corresponding to the top of the mesa structure and forming a gate electrode corresponding to the bottom of the mesa structure valley part are selectively etched. Then, cathode electrode 28 and gate electrode 27 are formed, an insulator layer 29 is then formed, and the part on the cathode electrode is selectively etched.
JP14173880A 1980-10-09 1980-10-09 Semiconductor device Granted JPS5766667A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14173880A JPS5766667A (en) 1980-10-09 1980-10-09 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14173880A JPS5766667A (en) 1980-10-09 1980-10-09 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5766667A true JPS5766667A (en) 1982-04-22
JPS6122869B2 JPS6122869B2 (en) 1986-06-03

Family

ID=15299049

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14173880A Granted JPS5766667A (en) 1980-10-09 1980-10-09 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5766667A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0146928A2 (en) * 1983-12-21 1985-07-03 Kabushiki Kaisha Toshiba Power semiconductor device with mesa type structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0146928A2 (en) * 1983-12-21 1985-07-03 Kabushiki Kaisha Toshiba Power semiconductor device with mesa type structure

Also Published As

Publication number Publication date
JPS6122869B2 (en) 1986-06-03

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