JPS57201078A - Semiconductor and its manufacture - Google Patents

Semiconductor and its manufacture

Info

Publication number
JPS57201078A
JPS57201078A JP8576881A JP8576881A JPS57201078A JP S57201078 A JPS57201078 A JP S57201078A JP 8576881 A JP8576881 A JP 8576881A JP 8576881 A JP8576881 A JP 8576881A JP S57201078 A JPS57201078 A JP S57201078A
Authority
JP
Japan
Prior art keywords
layer
gap
mask
etching
base layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8576881A
Other languages
Japanese (ja)
Inventor
Saburo Oikawa
Takahiro Nagano
Isamu Sanbe
Tsutomu Yao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8576881A priority Critical patent/JPS57201078A/en
Publication of JPS57201078A publication Critical patent/JPS57201078A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors

Abstract

PURPOSE:To manufacture a semiconductor of large current and high dielectric strength GTO, by forming P(+) type high-impurity density layer without slipping a photo-mask by self-alignment, after providing a gap between an N-emitter layer and a P-base layer. CONSTITUTION:First, a PN-junction is planer-structurd between a P-base layer 4 and N-emitter layer 5. The junction can securely be passivated on the main plane. A gate electrode takeout 7 or photoetching mask (silicon oxide film 9a, photo-resist film) to form a gap on an etching gap is used as a self-alignment mask, leaving a silicon oxide film 9a only after etching completion. A P type high-impurity density layer 5 of the same conductivity as the P-base layer is formed at the etching gap. A high-density P(+)-layer 4a of even depth is formed around the N-emitter layer or on the side of the gap.
JP8576881A 1981-06-05 1981-06-05 Semiconductor and its manufacture Pending JPS57201078A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8576881A JPS57201078A (en) 1981-06-05 1981-06-05 Semiconductor and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8576881A JPS57201078A (en) 1981-06-05 1981-06-05 Semiconductor and its manufacture

Publications (1)

Publication Number Publication Date
JPS57201078A true JPS57201078A (en) 1982-12-09

Family

ID=13868046

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8576881A Pending JPS57201078A (en) 1981-06-05 1981-06-05 Semiconductor and its manufacture

Country Status (1)

Country Link
JP (1) JPS57201078A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6232646A (en) * 1985-08-05 1987-02-12 Mitsubishi Electric Corp Manufacture of gate turn-off thyristor
JPS62179153A (en) * 1986-01-31 1987-08-06 Internatl Rectifier Corp Japan Ltd Manufacture of thyristor
EP0283588A2 (en) * 1987-02-24 1988-09-28 BBC Brown Boveri AG Controllable power semiconductor device
JPH01225360A (en) * 1988-03-04 1989-09-08 Fuji Electric Co Ltd Gate turn-off thyristor
JPH01290262A (en) * 1988-05-18 1989-11-22 Fuji Electric Co Ltd Manufacture of gate turn off thyrister
JPH0282052U (en) * 1988-12-13 1990-06-25
WO2011076613A1 (en) 2009-12-22 2011-06-30 Abb Technology Ag Power semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51128266A (en) * 1975-05-01 1976-11-09 Sony Corp Semiconductor unit
JPS5649566A (en) * 1980-09-19 1981-05-06 Hitachi Ltd Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51128266A (en) * 1975-05-01 1976-11-09 Sony Corp Semiconductor unit
JPS5649566A (en) * 1980-09-19 1981-05-06 Hitachi Ltd Semiconductor device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6232646A (en) * 1985-08-05 1987-02-12 Mitsubishi Electric Corp Manufacture of gate turn-off thyristor
JPS62179153A (en) * 1986-01-31 1987-08-06 Internatl Rectifier Corp Japan Ltd Manufacture of thyristor
EP0283588A2 (en) * 1987-02-24 1988-09-28 BBC Brown Boveri AG Controllable power semiconductor device
US4843449A (en) * 1987-02-24 1989-06-27 Bbc Brown Boveri Ag Controllable power semiconductor
JPH01225360A (en) * 1988-03-04 1989-09-08 Fuji Electric Co Ltd Gate turn-off thyristor
JPH01290262A (en) * 1988-05-18 1989-11-22 Fuji Electric Co Ltd Manufacture of gate turn off thyrister
JPH0282052U (en) * 1988-12-13 1990-06-25
WO2011076613A1 (en) 2009-12-22 2011-06-30 Abb Technology Ag Power semiconductor device
CN102656694A (en) * 2009-12-22 2012-09-05 Abb技术有限公司 Power semiconductor device
US8823052B2 (en) 2009-12-22 2014-09-02 Abb Technology Ag Power semiconductor device
CN102656694B (en) * 2009-12-22 2015-09-02 Abb技术有限公司 Power semiconductor

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