JPS57130480A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57130480A JPS57130480A JP1569881A JP1569881A JPS57130480A JP S57130480 A JPS57130480 A JP S57130480A JP 1569881 A JP1569881 A JP 1569881A JP 1569881 A JP1569881 A JP 1569881A JP S57130480 A JPS57130480 A JP S57130480A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- phosphorus
- shaped
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 6
- 238000009792 diffusion process Methods 0.000 abstract 6
- 229910052698 phosphorus Inorganic materials 0.000 abstract 6
- 239000011574 phosphorus Substances 0.000 abstract 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000000694 effects Effects 0.000 abstract 2
- 238000005247 gettering Methods 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000002950 deficient Effects 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To decrease the reverse leakage currents of a high dielectric resistance element, and to improve yield by forming a phosphorus layer into a P type conductive layer shaping a planer junction (or onto an oxide film of an upper section) as a diffusion layer and gettering the phosphorus layer. CONSTITUTION:A channel stopping layer 5 is formed to the side wall section of an N type island region 2 supported by a region such as a polycrystal region 4, the P type diffusion layer 6 is shaped from the surface and planer diode structure is formed. N<+> Regions 7 through phosphorus diffusion are shaped into the P region 6 at the same time as a contact region 8, and the phosphorus layer 10 is molded onto a SiO2 film 9 of the surface of a substrate. After diffusion treatment, an electrode 11 in which end sections 11a are formed in field structure and an electrode 12 are shaped. Accordingly, the gettering effect of phsophorus works more effectively, and defective rate due to the reverse leakage current value can be reuced. An effect similar to the diffusion layer 7 can be obtained because the oxide film 9 is left partially on the region 6 in place of the formation of the phosphorus diffusion layer 7 and a phosphorus layer 10a is shaped to the upper section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1569881A JPS57130480A (en) | 1981-02-06 | 1981-02-06 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1569881A JPS57130480A (en) | 1981-02-06 | 1981-02-06 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57130480A true JPS57130480A (en) | 1982-08-12 |
Family
ID=11895983
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1569881A Pending JPS57130480A (en) | 1981-02-06 | 1981-02-06 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57130480A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4879585A (en) * | 1984-03-31 | 1989-11-07 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN102184947A (en) * | 2011-03-15 | 2011-09-14 | 上海集成电路研发中心有限公司 | High-voltage semiconductor structure and preparation method thereof |
-
1981
- 1981-02-06 JP JP1569881A patent/JPS57130480A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4879585A (en) * | 1984-03-31 | 1989-11-07 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN102184947A (en) * | 2011-03-15 | 2011-09-14 | 上海集成电路研发中心有限公司 | High-voltage semiconductor structure and preparation method thereof |
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