JPS55105367A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55105367A
JPS55105367A JP1259179A JP1259179A JPS55105367A JP S55105367 A JPS55105367 A JP S55105367A JP 1259179 A JP1259179 A JP 1259179A JP 1259179 A JP1259179 A JP 1259179A JP S55105367 A JPS55105367 A JP S55105367A
Authority
JP
Japan
Prior art keywords
area
base
resistance
current
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1259179A
Other languages
Japanese (ja)
Other versions
JPS5933985B2 (en
Inventor
Hajime Kamioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1259179A priority Critical patent/JPS5933985B2/en
Publication of JPS55105367A publication Critical patent/JPS55105367A/en
Publication of JPS5933985B2 publication Critical patent/JPS5933985B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a reliable device by controlling the base resistance directly below the insulating film by means of a current that flows from the emitter electrode provided on the base area through an insulating film to the collector area.
CONSTITUTION: The n-type Si substrate 10 is made a collector area, the p-type base area 11 is formed and the emitter electrode 13 is provided on the area 11 through the SiO2 film 12. When current flows between the electrode 13 and the substrate 10, electrons are injected into the base area by the tunnel effect, the base resistance is reduced, and the resistance between both base connecting areas 14, 15 can be controlled. In this way, since no emitter diffusion layer is required, the affection of the surface impurity concentration is less, the crystalization ability is good, a leak current is less, no deterioration of withstanding voltage takes place, and consequently a reliable device can be obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP1259179A 1979-02-06 1979-02-06 semiconductor equipment Expired JPS5933985B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1259179A JPS5933985B2 (en) 1979-02-06 1979-02-06 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1259179A JPS5933985B2 (en) 1979-02-06 1979-02-06 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS55105367A true JPS55105367A (en) 1980-08-12
JPS5933985B2 JPS5933985B2 (en) 1984-08-20

Family

ID=11809584

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1259179A Expired JPS5933985B2 (en) 1979-02-06 1979-02-06 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS5933985B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5729752A (en) * 1980-07-30 1982-02-17 Yuuichi Yanagi Apparatus for melting snow on roof
JPH04230075A (en) * 1990-06-19 1992-08-19 American Teleph & Telegr Co <Att> Semiconductor device
JPH07201882A (en) * 1993-12-23 1995-08-04 Internatl Business Mach Corp <Ibm> Carrier-conduction type conductor-insulator-semiconductor transistor (cis), and manufacture thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220034196A (en) 2019-09-06 2022-03-17 주식회사 히타치하이테크 Recipe information presentation system, recipe error estimation system

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5729752A (en) * 1980-07-30 1982-02-17 Yuuichi Yanagi Apparatus for melting snow on roof
JPS6123341B2 (en) * 1980-07-30 1986-06-05 Juichi Yanagi
JPH04230075A (en) * 1990-06-19 1992-08-19 American Teleph & Telegr Co <Att> Semiconductor device
JPH07201882A (en) * 1993-12-23 1995-08-04 Internatl Business Mach Corp <Ibm> Carrier-conduction type conductor-insulator-semiconductor transistor (cis), and manufacture thereof

Also Published As

Publication number Publication date
JPS5933985B2 (en) 1984-08-20

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