JPS55105367A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS55105367A JPS55105367A JP1259179A JP1259179A JPS55105367A JP S55105367 A JPS55105367 A JP S55105367A JP 1259179 A JP1259179 A JP 1259179A JP 1259179 A JP1259179 A JP 1259179A JP S55105367 A JPS55105367 A JP S55105367A
- Authority
- JP
- Japan
- Prior art keywords
- area
- base
- resistance
- current
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To obtain a reliable device by controlling the base resistance directly below the insulating film by means of a current that flows from the emitter electrode provided on the base area through an insulating film to the collector area.
CONSTITUTION: The n-type Si substrate 10 is made a collector area, the p-type base area 11 is formed and the emitter electrode 13 is provided on the area 11 through the SiO2 film 12. When current flows between the electrode 13 and the substrate 10, electrons are injected into the base area by the tunnel effect, the base resistance is reduced, and the resistance between both base connecting areas 14, 15 can be controlled. In this way, since no emitter diffusion layer is required, the affection of the surface impurity concentration is less, the crystalization ability is good, a leak current is less, no deterioration of withstanding voltage takes place, and consequently a reliable device can be obtained.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1259179A JPS5933985B2 (en) | 1979-02-06 | 1979-02-06 | semiconductor equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1259179A JPS5933985B2 (en) | 1979-02-06 | 1979-02-06 | semiconductor equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55105367A true JPS55105367A (en) | 1980-08-12 |
JPS5933985B2 JPS5933985B2 (en) | 1984-08-20 |
Family
ID=11809584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1259179A Expired JPS5933985B2 (en) | 1979-02-06 | 1979-02-06 | semiconductor equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5933985B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5729752A (en) * | 1980-07-30 | 1982-02-17 | Yuuichi Yanagi | Apparatus for melting snow on roof |
JPH04230075A (en) * | 1990-06-19 | 1992-08-19 | American Teleph & Telegr Co <Att> | Semiconductor device |
JPH07201882A (en) * | 1993-12-23 | 1995-08-04 | Internatl Business Mach Corp <Ibm> | Carrier-conduction type conductor-insulator-semiconductor transistor (cis), and manufacture thereof |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20220334172A1 (en) | 2019-09-06 | 2022-10-20 | Hitachi High-Tech Corporation | Recipe Information Presentation System and Recipe Error Inference System |
-
1979
- 1979-02-06 JP JP1259179A patent/JPS5933985B2/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5729752A (en) * | 1980-07-30 | 1982-02-17 | Yuuichi Yanagi | Apparatus for melting snow on roof |
JPS6123341B2 (en) * | 1980-07-30 | 1986-06-05 | Juichi Yanagi | |
JPH04230075A (en) * | 1990-06-19 | 1992-08-19 | American Teleph & Telegr Co <Att> | Semiconductor device |
JPH07201882A (en) * | 1993-12-23 | 1995-08-04 | Internatl Business Mach Corp <Ibm> | Carrier-conduction type conductor-insulator-semiconductor transistor (cis), and manufacture thereof |
Also Published As
Publication number | Publication date |
---|---|
JPS5933985B2 (en) | 1984-08-20 |
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