JPS5670675A - Manufacture of photoelectric converter - Google Patents
Manufacture of photoelectric converterInfo
- Publication number
- JPS5670675A JPS5670675A JP14749779A JP14749779A JPS5670675A JP S5670675 A JPS5670675 A JP S5670675A JP 14749779 A JP14749779 A JP 14749779A JP 14749779 A JP14749779 A JP 14749779A JP S5670675 A JPS5670675 A JP S5670675A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- insulating film
- thickness
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910021529 ammonia Inorganic materials 0.000 abstract 1
- 230000008033 biological extinction Effects 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To improve the reliability of the MIS type photoelectric converting element and prevent extinction due to the recombination of the minority carriers by a method wherein an insulating film or a semiinsulating film with specified thickness is formed on a semiconductor, and an electrode is made up on the insulating film. CONSTITUTION:Al with 1-1.5mu thickness is evaporated in vacuum on the back of the semiconductor 20, used as one electrode, washed by water, and placed in He containing ammonia, and a silicon nitride film 22 with 100Angstrom or less is made up on the surface. A semiconductor layer 23 to which impurities are doped is built up on the film 22, and employed as the other electrode. Metal such as Al may further be formed on the semiconductor layer 23 reticulately. A silicon oxide film may be utilized as the insulating film 22, and the thickness is made enough for flowing tunnel current.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14749779A JPS5670675A (en) | 1979-11-13 | 1979-11-13 | Manufacture of photoelectric converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14749779A JPS5670675A (en) | 1979-11-13 | 1979-11-13 | Manufacture of photoelectric converter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5670675A true JPS5670675A (en) | 1981-06-12 |
| JPH044757B2 JPH044757B2 (en) | 1992-01-29 |
Family
ID=15431712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14749779A Granted JPS5670675A (en) | 1979-11-13 | 1979-11-13 | Manufacture of photoelectric converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5670675A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5743477A (en) * | 1980-04-24 | 1982-03-11 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPS5832478A (en) * | 1981-08-20 | 1983-02-25 | Matsushita Electric Ind Co Ltd | Photo-conductive element |
| JPS6220380A (en) * | 1985-07-19 | 1987-01-28 | Shizuoka Univ | Photoelectric conversion device using amorphous silicon |
| JPS6247170A (en) * | 1985-08-23 | 1987-02-28 | ハイマン オプトエレクトロニクス ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Highly reverse resistance type diode device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54143086A (en) * | 1978-04-28 | 1979-11-07 | Rca Corp | Schottky barrier amorphous silicon solar battery |
-
1979
- 1979-11-13 JP JP14749779A patent/JPS5670675A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54143086A (en) * | 1978-04-28 | 1979-11-07 | Rca Corp | Schottky barrier amorphous silicon solar battery |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5743477A (en) * | 1980-04-24 | 1982-03-11 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPS6143872B2 (en) * | 1980-04-24 | 1986-09-30 | Sanyo Electric Co | |
| JPS5832478A (en) * | 1981-08-20 | 1983-02-25 | Matsushita Electric Ind Co Ltd | Photo-conductive element |
| JPS6220380A (en) * | 1985-07-19 | 1987-01-28 | Shizuoka Univ | Photoelectric conversion device using amorphous silicon |
| JPS6247170A (en) * | 1985-08-23 | 1987-02-28 | ハイマン オプトエレクトロニクス ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Highly reverse resistance type diode device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH044757B2 (en) | 1992-01-29 |
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