JPS55107257A - Ohmic electrode - Google Patents

Ohmic electrode

Info

Publication number
JPS55107257A
JPS55107257A JP1387979A JP1387979A JPS55107257A JP S55107257 A JPS55107257 A JP S55107257A JP 1387979 A JP1387979 A JP 1387979A JP 1387979 A JP1387979 A JP 1387979A JP S55107257 A JPS55107257 A JP S55107257A
Authority
JP
Japan
Prior art keywords
substrate
electrode
copper
metal
zinc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1387979A
Other languages
Japanese (ja)
Inventor
Kazutaka Terajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP13879A external-priority patent/JPS54109930A/en
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Publication of JPS55107257A publication Critical patent/JPS55107257A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To improve yield simultaneously with making manufacturing easy by using metal whose main part is copper including II group elements for electrode metal when providing an ohmic electrode on a P-type III-V group compound semiconductor.
CONSTITUTION: When coating an ohmic electrode 2 on a p-type III-V group compound semiconductor substrate 1 of indium arsenide, etc., copper of purity of 99.99% including 30 atomic percent preferably 5 atomic percent of zinc of purity also of 99.99% is used for the electrode metal. Zinc and copper are measured and sealed in a quartz ampule of about 10-6Torr, then heated above 1100°C and made into an alloy. Next, the substrate 1 is heated to 125°C, the degree of vacuum of its atmosphere is made to 10-6Torr, the alloy is deposited on the substrate and a metal electrode 2 is formed. Then, covering the surface with an oxidation preventive film 3 via a thin gold layer and heat-treating in hydrogen atmosphere at 150°C for 15min, a P+-type zinc diffusion layer 4 is formed on the surface of the substrate 1. Using the layer 4 so obtained, carrier concentration there is increased and electric resistance is reduced.
COPYRIGHT: (C)1980,JPO&Japio
JP1387979A 1979-01-08 1979-02-09 Ohmic electrode Pending JPS55107257A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13879A JPS54109930A (en) 1978-01-09 1979-01-08 Long chain fatty acid amides and hydrazides* their cyclopropano analogue* their manufacture and use

Publications (1)

Publication Number Publication Date
JPS55107257A true JPS55107257A (en) 1980-08-16

Family

ID=11465659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1387979A Pending JPS55107257A (en) 1979-01-08 1979-02-09 Ohmic electrode

Country Status (1)

Country Link
JP (1) JPS55107257A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130274A (en) * 1991-04-05 1992-07-14 International Business Machines Corporation Copper alloy metallurgies for VLSI interconnection structures
US5243222A (en) * 1991-04-05 1993-09-07 International Business Machines Corporation Copper alloy metallurgies for VLSI interconnection structures

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130274A (en) * 1991-04-05 1992-07-14 International Business Machines Corporation Copper alloy metallurgies for VLSI interconnection structures
US5243222A (en) * 1991-04-05 1993-09-07 International Business Machines Corporation Copper alloy metallurgies for VLSI interconnection structures

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