JPS5642335A - Zinc diffusion to 3-5 group compound semiconductor - Google Patents
Zinc diffusion to 3-5 group compound semiconductorInfo
- Publication number
- JPS5642335A JPS5642335A JP11827779A JP11827779A JPS5642335A JP S5642335 A JPS5642335 A JP S5642335A JP 11827779 A JP11827779 A JP 11827779A JP 11827779 A JP11827779 A JP 11827779A JP S5642335 A JPS5642335 A JP S5642335A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- compound semiconductor
- density
- group compound
- distribution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011701 zinc Substances 0.000 title abstract 5
- 238000009792 diffusion process Methods 0.000 title abstract 4
- 150000001875 compounds Chemical class 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052725 zinc Inorganic materials 0.000 title abstract 2
- 238000000034 method Methods 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 238000009826 distribution Methods 0.000 abstract 3
- 235000012431 wafers Nutrition 0.000 abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000005303 weighing Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To diffuse the zinc in high density distribution at a surface and low density at an inside of a substrate by a method wherein ZnAs2 or ZnP2 and III-V group compound semiconductor wafers are vacuum sealed in the same container and wafers are preserve at a high temperature. CONSTITUTION:To diffuse the Zn on the III-V group compound semiconductor at low density, there are a method using GaZn alloy, a method that an SiO2 mask is coated on the GaAs substrate, and Zn is diffused through the mask or others, but there are problems for the weighing of the diffusion source or a complexness of the process, further the surface density will be reduced when the inside densisty of wafer is lowered, it is very difficult to form an excellent ohmic connection. For this reason the ZnAs2 2 as the diffusion source is vacuum sealed in a quartz pipe 1 with the GaAs substrate 3, and make the temperature of the diffusion source 2 and the substrate 3 as T2, T1, when T1 is preserved at 700-900 deg.C, T2 at 600-700 deg.C, the Zn density can be diffused in the high distribution at the surface of substrate, in the low distribution at the inside. Such a method is simple and very advantageous for the manufacturing of LED or others.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11827779A JPS5642335A (en) | 1979-09-14 | 1979-09-14 | Zinc diffusion to 3-5 group compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11827779A JPS5642335A (en) | 1979-09-14 | 1979-09-14 | Zinc diffusion to 3-5 group compound semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5642335A true JPS5642335A (en) | 1981-04-20 |
Family
ID=14732662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11827779A Pending JPS5642335A (en) | 1979-09-14 | 1979-09-14 | Zinc diffusion to 3-5 group compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5642335A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04364027A (en) * | 1991-06-10 | 1992-12-16 | Victor Co Of Japan Ltd | Diffusion of zn into gaas |
| US5506186A (en) * | 1988-06-27 | 1996-04-09 | U.S. Philips Corporation | Method of manufacturing an optoelectronic device |
-
1979
- 1979-09-14 JP JP11827779A patent/JPS5642335A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5506186A (en) * | 1988-06-27 | 1996-04-09 | U.S. Philips Corporation | Method of manufacturing an optoelectronic device |
| JPH04364027A (en) * | 1991-06-10 | 1992-12-16 | Victor Co Of Japan Ltd | Diffusion of zn into gaas |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5642335A (en) | Zinc diffusion to 3-5 group compound semiconductor | |
| JPS54152878A (en) | Structure of semiconductor laser element and its manufacture | |
| US3755016A (en) | Diffusion process for compound semiconductors | |
| US4742022A (en) | Method of diffusing zinc into III-V compound semiconductor material | |
| JPS5737827A (en) | Manufacture of semiconductor device | |
| GB1264879A (en) | ||
| US4233614A (en) | Light emitting diode | |
| JPS5513955A (en) | Method for forming thin insulation film | |
| JPS5534470A (en) | Production for solar battery | |
| JPS55165689A (en) | Preparation of light emission semiconductor device | |
| GB920306A (en) | Fabrication method for semiconductor devices | |
| JPS5574195A (en) | Manufacturing semiconductor laser | |
| JPS5712588A (en) | Manufacture of buried type heterojunction laser element | |
| JPS6482615A (en) | Manufacture of semiconductor element | |
| JPS55107257A (en) | Ohmic electrode | |
| JPS5472669A (en) | Impurity diffusing method of closing tube type | |
| JPS5562727A (en) | Diffusing method of n-type impurity | |
| JPS5660013A (en) | Diffusion of gallium | |
| JPS56105625A (en) | Manufacture of compound semiconductor thin film single crystal of high ratio resistance and low transition density | |
| JPS5354972A (en) | Production of semiconductor device | |
| JPS5527669A (en) | Method of forming ohmic electrode to p-type 3-5 group compound semiconductor | |
| JPS6421964A (en) | Hetero-bipolar transistor | |
| GB1137373A (en) | Improvements in or relating to transistors | |
| JPS5470765A (en) | Manufacture of gallium arsenide wafer | |
| JPS5723277A (en) | Semiconductor light-receiving element and manufacture thereof |