JPS5712588A - Manufacture of buried type heterojunction laser element - Google Patents

Manufacture of buried type heterojunction laser element

Info

Publication number
JPS5712588A
JPS5712588A JP8704780A JP8704780A JPS5712588A JP S5712588 A JPS5712588 A JP S5712588A JP 8704780 A JP8704780 A JP 8704780A JP 8704780 A JP8704780 A JP 8704780A JP S5712588 A JPS5712588 A JP S5712588A
Authority
JP
Japan
Prior art keywords
layer
substrate
laser element
buried type
side electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8704780A
Other languages
Japanese (ja)
Other versions
JPS6344311B2 (en
Inventor
Hidenori Nomura
Mitsunori Sugimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8704780A priority Critical patent/JPS5712588A/en
Priority to US06/277,508 priority patent/US4429397A/en
Publication of JPS5712588A publication Critical patent/JPS5712588A/en
Publication of JPS6344311B2 publication Critical patent/JPS6344311B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To simplify the process of mask matching and the like in the impurity diffusing processes for the subject laser element by a method wherein a suitable film thickness for a semiconductor structure in the process of epitaxial growth is established. CONSTITUTION:A stripe-form mesa structure 1a is formed on an InP single crystal substrate by performing a chemical etching and the upper section of the structure 1 is formed in parallel with the plane of cleavage of the substrate 1. Then, on the substrate 1 having the structure 1a, an active semiconductor layer 2 containing an active semiconductor region 2a, the first upper clad layer 3, the second upper clad layer 4 and an electrode forming layer 5 are formed successively. A Zn diffusion is performed from the surface of the layer 5, a conductive type inverting layer 6 of the depth reaching the clad region 3a at the upper section of the mesa of the layer 3 is formed and after a P side electrode 7 has been formed, a wafer with the prescribed thickness is formed by grinding from the surface of the substrate 1. Lastly, an N side electrode 8 is formed and the buried type heterojunction laser element can be manufactured with a high yield rate.
JP8704780A 1980-06-26 1980-06-26 Manufacture of buried type heterojunction laser element Granted JPS5712588A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8704780A JPS5712588A (en) 1980-06-26 1980-06-26 Manufacture of buried type heterojunction laser element
US06/277,508 US4429397A (en) 1980-06-26 1981-06-26 Buried heterostructure laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8704780A JPS5712588A (en) 1980-06-26 1980-06-26 Manufacture of buried type heterojunction laser element

Publications (2)

Publication Number Publication Date
JPS5712588A true JPS5712588A (en) 1982-01-22
JPS6344311B2 JPS6344311B2 (en) 1988-09-05

Family

ID=13904020

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8704780A Granted JPS5712588A (en) 1980-06-26 1980-06-26 Manufacture of buried type heterojunction laser element

Country Status (1)

Country Link
JP (1) JPS5712588A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61183987A (en) * 1985-02-08 1986-08-16 Sony Corp Semiconductor laser
JPS6373690A (en) * 1986-09-17 1988-04-04 Matsushita Electric Ind Co Ltd Semiconductor laser device
FR2637743A1 (en) * 1988-10-06 1990-04-13 France Etat Semiconductor laser with blocking layer and buried stripe and process for manufacturing this laser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61183987A (en) * 1985-02-08 1986-08-16 Sony Corp Semiconductor laser
JPS6373690A (en) * 1986-09-17 1988-04-04 Matsushita Electric Ind Co Ltd Semiconductor laser device
FR2637743A1 (en) * 1988-10-06 1990-04-13 France Etat Semiconductor laser with blocking layer and buried stripe and process for manufacturing this laser

Also Published As

Publication number Publication date
JPS6344311B2 (en) 1988-09-05

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