JPS57167693A - Manufacture of optical semiconductor element - Google Patents
Manufacture of optical semiconductor elementInfo
- Publication number
- JPS57167693A JPS57167693A JP5267681A JP5267681A JPS57167693A JP S57167693 A JPS57167693 A JP S57167693A JP 5267681 A JP5267681 A JP 5267681A JP 5267681 A JP5267681 A JP 5267681A JP S57167693 A JPS57167693 A JP S57167693A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mesa
- semiconductor element
- type inp
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
- Weting (AREA)
Abstract
PURPOSE:To restrict the depth of mesa as well as to increase the accuracy of the upper surface of the buried layer for the subject semiconductor element by a method wherein an etching-stop layer is provided on the surface of a substrate. CONSTITUTION:The mesa 23 and the etching-stop layer 25 are formed on the substrate 21. Then, an N type InP layer 26, an active layer 27, and a P type InP layer 28 are formed. Subsequently, a mesa etching is performed using an SiO2 mask 29 as a mask, and a mesa 30 is formed. At this time, the bottom part of the masa 30 is coincided with layer 25. Then, the first buried layer 32 of P type InP, the second buried layer 33 of N type InP are formed. At this time, the height of the layer 32 is coincided with the layer 27. Then, a P<+> diffusion layer 34, a P type electrode 35 and an N type electrode 36 are formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5267681A JPS57167693A (en) | 1981-04-08 | 1981-04-08 | Manufacture of optical semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5267681A JPS57167693A (en) | 1981-04-08 | 1981-04-08 | Manufacture of optical semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57167693A true JPS57167693A (en) | 1982-10-15 |
Family
ID=12921476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5267681A Pending JPS57167693A (en) | 1981-04-08 | 1981-04-08 | Manufacture of optical semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57167693A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61107696A (en) * | 1984-10-30 | 1986-05-26 | シャープ株式会社 | Thin film el element |
| EP1763117A1 (en) * | 2005-09-12 | 2007-03-14 | Agilent Technologies, Inc. | Method for making reproducible buried heterostructure semiconductor devices |
| JP2015122419A (en) * | 2013-12-24 | 2015-07-02 | 三菱電機株式会社 | Semiconductor laser element manufacturing method |
-
1981
- 1981-04-08 JP JP5267681A patent/JPS57167693A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61107696A (en) * | 1984-10-30 | 1986-05-26 | シャープ株式会社 | Thin film el element |
| JPH0119759B2 (en) * | 1984-10-30 | 1989-04-12 | Sharp Kk | |
| EP1763117A1 (en) * | 2005-09-12 | 2007-03-14 | Agilent Technologies, Inc. | Method for making reproducible buried heterostructure semiconductor devices |
| JP2015122419A (en) * | 2013-12-24 | 2015-07-02 | 三菱電機株式会社 | Semiconductor laser element manufacturing method |
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