JPS57167693A - Manufacture of optical semiconductor element - Google Patents

Manufacture of optical semiconductor element

Info

Publication number
JPS57167693A
JPS57167693A JP5267681A JP5267681A JPS57167693A JP S57167693 A JPS57167693 A JP S57167693A JP 5267681 A JP5267681 A JP 5267681A JP 5267681 A JP5267681 A JP 5267681A JP S57167693 A JPS57167693 A JP S57167693A
Authority
JP
Japan
Prior art keywords
layer
mesa
semiconductor element
type inp
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5267681A
Other languages
Japanese (ja)
Inventor
Tsunao Yuasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5267681A priority Critical patent/JPS57167693A/en
Publication of JPS57167693A publication Critical patent/JPS57167693A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To restrict the depth of mesa as well as to increase the accuracy of the upper surface of the buried layer for the subject semiconductor element by a method wherein an etching-stop layer is provided on the surface of a substrate. CONSTITUTION:The mesa 23 and the etching-stop layer 25 are formed on the substrate 21. Then, an N type InP layer 26, an active layer 27, and a P type InP layer 28 are formed. Subsequently, a mesa etching is performed using an SiO2 mask 29 as a mask, and a mesa 30 is formed. At this time, the bottom part of the masa 30 is coincided with layer 25. Then, the first buried layer 32 of P type InP, the second buried layer 33 of N type InP are formed. At this time, the height of the layer 32 is coincided with the layer 27. Then, a P<+> diffusion layer 34, a P type electrode 35 and an N type electrode 36 are formed.
JP5267681A 1981-04-08 1981-04-08 Manufacture of optical semiconductor element Pending JPS57167693A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5267681A JPS57167693A (en) 1981-04-08 1981-04-08 Manufacture of optical semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5267681A JPS57167693A (en) 1981-04-08 1981-04-08 Manufacture of optical semiconductor element

Publications (1)

Publication Number Publication Date
JPS57167693A true JPS57167693A (en) 1982-10-15

Family

ID=12921476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5267681A Pending JPS57167693A (en) 1981-04-08 1981-04-08 Manufacture of optical semiconductor element

Country Status (1)

Country Link
JP (1) JPS57167693A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61107696A (en) * 1984-10-30 1986-05-26 シャープ株式会社 Thin film el element
EP1763117A1 (en) * 2005-09-12 2007-03-14 Agilent Technologies, Inc. Method for making reproducible buried heterostructure semiconductor devices
JP2015122419A (en) * 2013-12-24 2015-07-02 三菱電機株式会社 Semiconductor laser element manufacturing method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61107696A (en) * 1984-10-30 1986-05-26 シャープ株式会社 Thin film el element
JPH0119759B2 (en) * 1984-10-30 1989-04-12 Sharp Kk
EP1763117A1 (en) * 2005-09-12 2007-03-14 Agilent Technologies, Inc. Method for making reproducible buried heterostructure semiconductor devices
JP2015122419A (en) * 2013-12-24 2015-07-02 三菱電機株式会社 Semiconductor laser element manufacturing method

Similar Documents

Publication Publication Date Title
JPS5636143A (en) Manufacture of semiconductor device
KR900000209B1 (en) Manufacture of semiconductor a photo diode and avalanche photodiode
JPS5710992A (en) Semiconductor device and manufacture therefor
EP0029552A3 (en) Method for producing a semiconductor device
JPS57167693A (en) Manufacture of optical semiconductor element
JPS56126968A (en) Semiconductor device
JPS55162288A (en) Manufacture of buried type photosemiconductor device
JPS5743428A (en) Mesa etching method
JPS5618484A (en) Manufacture of semiconductor laser
JPS5763882A (en) Manufacture of semiconductor laser
JPS5662386A (en) Manufacture of semiconductor device
JPS57157540A (en) Semiconductor device
JPS5748286A (en) Manufacture of buried hetero structured semiconductor laser
JPS6457641A (en) Manufacture of semiconductor device
JPS5712588A (en) Manufacture of buried type heterojunction laser element
JPS56129337A (en) Insulative separation structure for semiconductor monolithic integrated circuit
JPS6473726A (en) Etching and manufacture of semiconductor device
JPS5578568A (en) Manufacture of semiconductor device
JPS5712579A (en) Buried type semiconductor laser
JPS5287373A (en) Production of semiconductor device
JPS56169384A (en) Manufacture of semiconductor laser
JPS56169385A (en) Manufacture of semiconductor laser
JPS6422089A (en) Optically bistable semiconductor laser and its manufacture
JPS5731171A (en) Semiconductor device
JPS5724558A (en) Semicondctor device