JPS5724558A - Semicondctor device - Google Patents
Semicondctor deviceInfo
- Publication number
- JPS5724558A JPS5724558A JP10020080A JP10020080A JPS5724558A JP S5724558 A JPS5724558 A JP S5724558A JP 10020080 A JP10020080 A JP 10020080A JP 10020080 A JP10020080 A JP 10020080A JP S5724558 A JPS5724558 A JP S5724558A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- grooves
- type
- etching
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000005530 etching Methods 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000007788 liquid Substances 0.000 abstract 2
- 239000008188 pellet Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Weting (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To form the grooves in one surface of a wafer so as to be deeper than those in the other surfce and obtain a configuration which is advantageous to assembly, by a method wherein a wax layer is formed on only the etching mask on one surface of a wafer, and both surfaces are etched while the wafer is being moved in an etching liquid. CONSTITUTION:A P type impurity is diffused from both surfaces of an N type Si substrate 1 to form P type diffused layers 2 and 3. Then, an N type region 4 is formed by selective diffusion. Then, the SiO2 in the portions where mesa grooves to separate said wafer into individual pellets are to be formed is removed by employing a photoresist technique. Then, apiezon wax is printed into a pattern on the portions where SiO2 5 has been left by employing a printing technique. Then, while the wafer is being moved in an etching liquid, etching is carried out to form grooves. Thereby, the grooves in the lower surface are etched deeper than those in the upper surface. After glass has been attached thereto, said wafer is divided into pellets.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10020080A JPS5724558A (en) | 1980-07-22 | 1980-07-22 | Semicondctor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10020080A JPS5724558A (en) | 1980-07-22 | 1980-07-22 | Semicondctor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5724558A true JPS5724558A (en) | 1982-02-09 |
| JPH0140505B2 JPH0140505B2 (en) | 1989-08-29 |
Family
ID=14267653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10020080A Granted JPS5724558A (en) | 1980-07-22 | 1980-07-22 | Semicondctor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5724558A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109309001A (en) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | A method of GPP chip is made using printing technology |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06342902A (en) * | 1993-06-01 | 1994-12-13 | Komatsu Ltd | High breakdown strength semiconductor device |
-
1980
- 1980-07-22 JP JP10020080A patent/JPS5724558A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109309001A (en) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | A method of GPP chip is made using printing technology |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0140505B2 (en) | 1989-08-29 |
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