JPS57101668A - Etching method - Google Patents
Etching methodInfo
- Publication number
- JPS57101668A JPS57101668A JP17946680A JP17946680A JPS57101668A JP S57101668 A JPS57101668 A JP S57101668A JP 17946680 A JP17946680 A JP 17946680A JP 17946680 A JP17946680 A JP 17946680A JP S57101668 A JPS57101668 A JP S57101668A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio
- etched
- thickness
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To prevent an overhung phenomenon in formation of a SiO2 film or the like and to prevent breakage of an upper electrode by forming an Al film on a wafer so as to form a side surface thereof into a stepped form by etching.
CONSTITUTION: An Al film 12 is formed on a wafer 11 as a lower electrode and a photoresist pattern 13 is formed thereon. Subsequently, by a dry etching method, the Al film 12 is etched so as to reduce a thickness thereof to about half thickness of a vapor deposition film thickness and the photoresist 13 is flowed by heating to mask an etched side surface 14. Next, the Al film 12 is etched to form a first Al wiring pattern 15 in a stepped form. Further, a SiO2 film 16 is formed and a predetermined part of the SiO2 film 16 is removed by hot etching and, thereafter, an Al film as an upper electrode is formed by vapor deposition to form a second Al wiring pattern 17.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17946680A JPS57101668A (en) | 1980-12-17 | 1980-12-17 | Etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17946680A JPS57101668A (en) | 1980-12-17 | 1980-12-17 | Etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57101668A true JPS57101668A (en) | 1982-06-24 |
Family
ID=16066338
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17946680A Pending JPS57101668A (en) | 1980-12-17 | 1980-12-17 | Etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57101668A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6436049A (en) * | 1987-07-31 | 1989-02-07 | Toshiba Corp | Semiconductor integrated circuit and manufacture thereof |
-
1980
- 1980-12-17 JP JP17946680A patent/JPS57101668A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6436049A (en) * | 1987-07-31 | 1989-02-07 | Toshiba Corp | Semiconductor integrated circuit and manufacture thereof |
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