JPS5511354A - Manufacture of semiconductor - Google Patents

Manufacture of semiconductor

Info

Publication number
JPS5511354A
JPS5511354A JP8402778A JP8402778A JPS5511354A JP S5511354 A JPS5511354 A JP S5511354A JP 8402778 A JP8402778 A JP 8402778A JP 8402778 A JP8402778 A JP 8402778A JP S5511354 A JPS5511354 A JP S5511354A
Authority
JP
Japan
Prior art keywords
film
spots
sio
substrate
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8402778A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Mitsuru Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP8402778A priority Critical patent/JPS5511354A/en
Publication of JPS5511354A publication Critical patent/JPS5511354A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: When forming SiO2 film on the whole surfce of a semiconductor substrate by CVD method after separating in spots the SiO2 film deposited on said substrate, to select the larger angles of grooving for separating said spots than 90° and to give to said film the larger thicknesses than 1/2 of the minimum width of groove for making even surface of said film.
CONSTITUTION: There is process consisting of forming separate SiO2 film spots 2 by making selective etching removal of the SiO2 film deposited on the surface of a semiconductor substrate 1 and forming SiO2 film 4 on the whole surface of said substrate 1 by CVD method for filling the clearances between said spots. Therein, if said clearances 3 between said spots are large, no even surface of said film 4 can be obtained so that subsequent working is difficult. Therefore, the large working angle θ for providing grooves 6 between said separate spots 2 than 90° are selected, and the larger thicknesses than 1/2 of the minimum width of said groove 6 are given to the CVD film 7 formed on the whole surface of said substrate 1. Thereby, no unevenness occurs to the surface of said film 7 so that subsequent working is easy.
COPYRIGHT: (C)1980,JPO&Japio
JP8402778A 1978-07-12 1978-07-12 Manufacture of semiconductor Pending JPS5511354A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8402778A JPS5511354A (en) 1978-07-12 1978-07-12 Manufacture of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8402778A JPS5511354A (en) 1978-07-12 1978-07-12 Manufacture of semiconductor

Publications (1)

Publication Number Publication Date
JPS5511354A true JPS5511354A (en) 1980-01-26

Family

ID=13819060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8402778A Pending JPS5511354A (en) 1978-07-12 1978-07-12 Manufacture of semiconductor

Country Status (1)

Country Link
JP (1) JPS5511354A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57143846A (en) * 1981-02-27 1982-09-06 Fujitsu Ltd Formation of multi-layer wiring compostion
JPS57147677U (en) * 1981-03-13 1982-09-16
JPS5831557A (en) * 1981-08-18 1983-02-24 Nec Corp Semiconductor device
JPS58119651A (en) * 1982-01-11 1983-07-16 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof
JPS6086847A (en) * 1983-10-19 1985-05-16 Toshiba Corp Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4924171B1 (en) * 1968-12-20 1974-06-20
JPS51128277A (en) * 1975-04-30 1976-11-09 Fujitsu Ltd Semiconductor unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4924171B1 (en) * 1968-12-20 1974-06-20
JPS51128277A (en) * 1975-04-30 1976-11-09 Fujitsu Ltd Semiconductor unit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57143846A (en) * 1981-02-27 1982-09-06 Fujitsu Ltd Formation of multi-layer wiring compostion
JPS57147677U (en) * 1981-03-13 1982-09-16
JPS5831557A (en) * 1981-08-18 1983-02-24 Nec Corp Semiconductor device
JPS58119651A (en) * 1982-01-11 1983-07-16 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof
JPH0113225B2 (en) * 1982-01-11 1989-03-03 Nippon Telegraph & Telephone
JPS6086847A (en) * 1983-10-19 1985-05-16 Toshiba Corp Manufacture of semiconductor device

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