JPS5511354A - Manufacture of semiconductor - Google Patents
Manufacture of semiconductorInfo
- Publication number
- JPS5511354A JPS5511354A JP8402778A JP8402778A JPS5511354A JP S5511354 A JPS5511354 A JP S5511354A JP 8402778 A JP8402778 A JP 8402778A JP 8402778 A JP8402778 A JP 8402778A JP S5511354 A JPS5511354 A JP S5511354A
- Authority
- JP
- Japan
- Prior art keywords
- film
- spots
- sio
- substrate
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: When forming SiO2 film on the whole surfce of a semiconductor substrate by CVD method after separating in spots the SiO2 film deposited on said substrate, to select the larger angles of grooving for separating said spots than 90° and to give to said film the larger thicknesses than 1/2 of the minimum width of groove for making even surface of said film.
CONSTITUTION: There is process consisting of forming separate SiO2 film spots 2 by making selective etching removal of the SiO2 film deposited on the surface of a semiconductor substrate 1 and forming SiO2 film 4 on the whole surface of said substrate 1 by CVD method for filling the clearances between said spots. Therein, if said clearances 3 between said spots are large, no even surface of said film 4 can be obtained so that subsequent working is difficult. Therefore, the large working angle θ for providing grooves 6 between said separate spots 2 than 90° are selected, and the larger thicknesses than 1/2 of the minimum width of said groove 6 are given to the CVD film 7 formed on the whole surface of said substrate 1. Thereby, no unevenness occurs to the surface of said film 7 so that subsequent working is easy.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8402778A JPS5511354A (en) | 1978-07-12 | 1978-07-12 | Manufacture of semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8402778A JPS5511354A (en) | 1978-07-12 | 1978-07-12 | Manufacture of semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5511354A true JPS5511354A (en) | 1980-01-26 |
Family
ID=13819060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8402778A Pending JPS5511354A (en) | 1978-07-12 | 1978-07-12 | Manufacture of semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5511354A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57143846A (en) * | 1981-02-27 | 1982-09-06 | Fujitsu Ltd | Formation of multi-layer wiring compostion |
JPS57147677U (en) * | 1981-03-13 | 1982-09-16 | ||
JPS5831557A (en) * | 1981-08-18 | 1983-02-24 | Nec Corp | Semiconductor device |
JPS58119651A (en) * | 1982-01-11 | 1983-07-16 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and manufacture thereof |
JPS6086847A (en) * | 1983-10-19 | 1985-05-16 | Toshiba Corp | Manufacture of semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4924171B1 (en) * | 1968-12-20 | 1974-06-20 | ||
JPS51128277A (en) * | 1975-04-30 | 1976-11-09 | Fujitsu Ltd | Semiconductor unit |
-
1978
- 1978-07-12 JP JP8402778A patent/JPS5511354A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4924171B1 (en) * | 1968-12-20 | 1974-06-20 | ||
JPS51128277A (en) * | 1975-04-30 | 1976-11-09 | Fujitsu Ltd | Semiconductor unit |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57143846A (en) * | 1981-02-27 | 1982-09-06 | Fujitsu Ltd | Formation of multi-layer wiring compostion |
JPS57147677U (en) * | 1981-03-13 | 1982-09-16 | ||
JPS5831557A (en) * | 1981-08-18 | 1983-02-24 | Nec Corp | Semiconductor device |
JPS58119651A (en) * | 1982-01-11 | 1983-07-16 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and manufacture thereof |
JPH0113225B2 (en) * | 1982-01-11 | 1989-03-03 | Nippon Telegraph & Telephone | |
JPS6086847A (en) * | 1983-10-19 | 1985-05-16 | Toshiba Corp | Manufacture of semiconductor device |
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