JPS54149463A - Selective diffusion method aluminum - Google Patents

Selective diffusion method aluminum

Info

Publication number
JPS54149463A
JPS54149463A JP5806478A JP5806478A JPS54149463A JP S54149463 A JPS54149463 A JP S54149463A JP 5806478 A JP5806478 A JP 5806478A JP 5806478 A JP5806478 A JP 5806478A JP S54149463 A JPS54149463 A JP S54149463A
Authority
JP
Japan
Prior art keywords
knock
semiconductor substrate
layer
substrate
atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5806478A
Other languages
Japanese (ja)
Other versions
JPS6117134B2 (en
Inventor
Kaoru Inoue
Takashi Hirao
Shigetoshi Takayanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5806478A priority Critical patent/JPS54149463A/en
Publication of JPS54149463A publication Critical patent/JPS54149463A/en
Publication of JPS6117134B2 publication Critical patent/JPS6117134B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To reduce the reduction of an Al density in a Si substrate by making it possible to form a uniform and good-control property Al knock-on layer by knock- on introduction and out-diffusing Al from the Si substrate.
CONSTITUTION: First, insulating coating 2 is formed selectively on one main face of semiconductor substrate 1, and next, insulating film 4 including Al as a constitutional element is formed on all the surface of semiconductor substrate 1. Next, insulating film 4 including Al is removed selectively while leaving a region where insulting film 4 including Al is brought into contact with semiconductor substrate 1, and next, heavy ions are injected to knock-on Al atoms into semiconductor substrate 1 and form knock-on layer 6 of Al atoms. Next, knock-on layer 6 is used as a diffusion source to perform diffusion by heating for a prescribed time, thereby forming medium-scale diffusion layer 7.
COPYRIGHT: (C)1979,JPO&Japio
JP5806478A 1978-05-15 1978-05-15 Selective diffusion method aluminum Granted JPS54149463A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5806478A JPS54149463A (en) 1978-05-15 1978-05-15 Selective diffusion method aluminum

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5806478A JPS54149463A (en) 1978-05-15 1978-05-15 Selective diffusion method aluminum

Publications (2)

Publication Number Publication Date
JPS54149463A true JPS54149463A (en) 1979-11-22
JPS6117134B2 JPS6117134B2 (en) 1986-05-06

Family

ID=13073471

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5806478A Granted JPS54149463A (en) 1978-05-15 1978-05-15 Selective diffusion method aluminum

Country Status (1)

Country Link
JP (1) JPS54149463A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8163635B2 (en) 2009-12-07 2012-04-24 Sen Corporation Manufacturing method of semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5713182B2 (en) * 2011-01-31 2015-05-07 三菱マテリアル株式会社 Silicon electrode plate for plasma etching

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8163635B2 (en) 2009-12-07 2012-04-24 Sen Corporation Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
JPS6117134B2 (en) 1986-05-06

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