JPS55110037A - Method for making semiconductor device - Google Patents
Method for making semiconductor deviceInfo
- Publication number
- JPS55110037A JPS55110037A JP1811679A JP1811679A JPS55110037A JP S55110037 A JPS55110037 A JP S55110037A JP 1811679 A JP1811679 A JP 1811679A JP 1811679 A JP1811679 A JP 1811679A JP S55110037 A JPS55110037 A JP S55110037A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- atom
- injected
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To obtain an Si2N4 film having a superior and fine interfacial condition by a method wherein the first Si3N4 film is made to adhere to the surface of a semiconductor substrate when forming an Si3N4 film to be used as a gate insulating film, and a new Si3N4 is caused to be produced by adding heat treatment after introducing N into the substrate by means of an ion injection.
CONSTITUTION: The first Si3N4 film 2 is grown in a gaseous phase on an Si substrate 1, and an N atom is injected into the substrate through the film 2 by means of an ion injection in such a way that the position 3 of the peak value of N atom density is located at a depth of about 100Å from the interface 4 between the substrate 1 and the film 2. Next heat treatment is added in an N2 atmosphere at 1200°C for 20min so as to cause reaction between the injected N atom and the substrate 1 and to convert the surface of the substrate 1 under the film 2 into the second Si3N4 film with a thickness of 100Å. Then the film 2 is etched and removed by the use of heated phosphoric acid to expose a film 5, which is again heat treated in the N2 atmosphere in order to remove pinholes produced during etching. By so doing, it is possible to obtain a suitable Si3N4 film as a gate insulating film for a semiconductor device of MIS structure.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1811679A JPS55110037A (en) | 1979-02-19 | 1979-02-19 | Method for making semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1811679A JPS55110037A (en) | 1979-02-19 | 1979-02-19 | Method for making semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55110037A true JPS55110037A (en) | 1980-08-25 |
JPS6112374B2 JPS6112374B2 (en) | 1986-04-08 |
Family
ID=11962632
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1811679A Granted JPS55110037A (en) | 1979-02-19 | 1979-02-19 | Method for making semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55110037A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5756970A (en) * | 1980-09-22 | 1982-04-05 | Oki Electric Ind Co Ltd | Manufacture of insulated gate type field effect semiconductor device |
JPS5864034A (en) * | 1981-10-13 | 1983-04-16 | Mitsubishi Electric Corp | Formation of silicon nitride film |
JPH02186632A (en) * | 1989-01-12 | 1990-07-20 | Nec Corp | Formation of insulating film |
US5264724A (en) * | 1989-02-13 | 1993-11-23 | The University Of Arkansas | Silicon nitride for application as the gate dielectric in MOS devices |
-
1979
- 1979-02-19 JP JP1811679A patent/JPS55110037A/en active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5756970A (en) * | 1980-09-22 | 1982-04-05 | Oki Electric Ind Co Ltd | Manufacture of insulated gate type field effect semiconductor device |
JPH0243340B2 (en) * | 1980-09-22 | 1990-09-28 | ||
JPS5864034A (en) * | 1981-10-13 | 1983-04-16 | Mitsubishi Electric Corp | Formation of silicon nitride film |
JPS6352773B2 (en) * | 1981-10-13 | 1988-10-20 | Mitsubishi Electric Corp | |
JPH02186632A (en) * | 1989-01-12 | 1990-07-20 | Nec Corp | Formation of insulating film |
US5264724A (en) * | 1989-02-13 | 1993-11-23 | The University Of Arkansas | Silicon nitride for application as the gate dielectric in MOS devices |
Also Published As
Publication number | Publication date |
---|---|
JPS6112374B2 (en) | 1986-04-08 |
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