JPS64744A - Element isolation method in semiconductor device - Google Patents

Element isolation method in semiconductor device

Info

Publication number
JPS64744A
JPS64744A JP1126688A JP1126688A JPS64744A JP S64744 A JPS64744 A JP S64744A JP 1126688 A JP1126688 A JP 1126688A JP 1126688 A JP1126688 A JP 1126688A JP S64744 A JPS64744 A JP S64744A
Authority
JP
Japan
Prior art keywords
element isolation
argon
oxidation
isolation region
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1126688A
Other languages
Japanese (ja)
Other versions
JPH01744A (en
Inventor
Takeshi Koga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP63-11266A priority Critical patent/JPH01744A/en
Priority claimed from JP63-11266A external-priority patent/JPH01744A/en
Publication of JPS64744A publication Critical patent/JPS64744A/en
Publication of JPH01744A publication Critical patent/JPH01744A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE: To increase the rate of oxidation in an element isolation region section, and to reduce the difference of mask size and the size of finishing by injecting an additive for accelerating oxidation into a foundation oxide thin-film in the element isolation region section before an oxide film for element isolation is formed.
CONSTITUTION: The whole surface of a silicon substrate 1 is exposed to argon gas 8 through a CVD method. Consequently, argon 8 is injected into a foundation silicon oxide thin-film 2 in an element isolation region section 5. Argon 8 does not creep to the section of the silicon oxide films 2 in element region sections 4 masked with silicon nitride films 3 at that time. As a result, argon is injected only into the silicon oxide film 2 in the element isolation region section 5 not masked with the silicon nitride film 3. Argon 8 has the action of the acceleration of oxidation. Accordingly, the rate of oxidation of the element isolation region section 5 into which argon 8 is injected is increased sufficiently, and oxidation is completed before argon passes under the silicon nitride films 2.
COPYRIGHT: (C)1989,JPO&Japio
JP63-11266A 1987-03-30 1988-01-20 Element isolation method in semiconductor devices Pending JPH01744A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63-11266A JPH01744A (en) 1987-03-30 1988-01-20 Element isolation method in semiconductor devices

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62-79131 1987-03-30
JP7913187 1987-03-30
JP63-11266A JPH01744A (en) 1987-03-30 1988-01-20 Element isolation method in semiconductor devices

Publications (2)

Publication Number Publication Date
JPS64744A true JPS64744A (en) 1989-01-05
JPH01744A JPH01744A (en) 1989-01-05

Family

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5372952A (en) * 1992-04-03 1994-12-13 National Semiconductor Corporation Method for forming isolated semiconductor structures
US5707888A (en) * 1995-05-04 1998-01-13 Lsi Logic Corporation Oxide formed in semiconductor substrate by implantation of substrate with a noble gas prior to oxidation
US5869385A (en) * 1995-12-08 1999-02-09 Advanced Micro Devices, Inc. Selectively oxidized field oxide region

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5372952A (en) * 1992-04-03 1994-12-13 National Semiconductor Corporation Method for forming isolated semiconductor structures
US5376560A (en) * 1992-04-03 1994-12-27 National Semiconductor Corporation Method for forming isolated semiconductor structures
US5707888A (en) * 1995-05-04 1998-01-13 Lsi Logic Corporation Oxide formed in semiconductor substrate by implantation of substrate with a noble gas prior to oxidation
US5739580A (en) * 1995-05-04 1998-04-14 Lsi Logic Corporation Oxide formed in semiconductor substrate by implantation of substrate with a noble gas prior to oxidation
US5869385A (en) * 1995-12-08 1999-02-09 Advanced Micro Devices, Inc. Selectively oxidized field oxide region

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