JPS5243370A - Method of forming depression in semiconductor substrate - Google Patents

Method of forming depression in semiconductor substrate

Info

Publication number
JPS5243370A
JPS5243370A JP11773675A JP11773675A JPS5243370A JP S5243370 A JPS5243370 A JP S5243370A JP 11773675 A JP11773675 A JP 11773675A JP 11773675 A JP11773675 A JP 11773675A JP S5243370 A JPS5243370 A JP S5243370A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
forming depression
depression
corners
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11773675A
Other languages
Japanese (ja)
Inventor
Kaoru Niino
Takashi Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11773675A priority Critical patent/JPS5243370A/en
Publication of JPS5243370A publication Critical patent/JPS5243370A/en
Pending legal-status Critical Current

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  • Weting (AREA)

Abstract

PURPOSE: To form a depression having a recess at lateral corners in a Si single crystal substrate having (100) face by using anisotropic etching and an etching mask that relieves the corners of the buldged portions.
COPYRIGHT: (C)1977,JPO&Japio
JP11773675A 1975-10-01 1975-10-01 Method of forming depression in semiconductor substrate Pending JPS5243370A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11773675A JPS5243370A (en) 1975-10-01 1975-10-01 Method of forming depression in semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11773675A JPS5243370A (en) 1975-10-01 1975-10-01 Method of forming depression in semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS5243370A true JPS5243370A (en) 1977-04-05

Family

ID=14719009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11773675A Pending JPS5243370A (en) 1975-10-01 1975-10-01 Method of forming depression in semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5243370A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53148976A (en) * 1977-05-31 1978-12-26 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS542666A (en) * 1977-06-08 1979-01-10 Mitsubishi Electric Corp Manufacture of semiconductor device
US4698131A (en) * 1985-12-13 1987-10-06 Xerox Corporation Replaceable image sensor array
US5484507A (en) * 1993-12-01 1996-01-16 Ford Motor Company Self compensating process for aligning an aperture with crystal planes in a substrate
US5683546A (en) * 1992-10-23 1997-11-04 Ricoh Seiki Company, Ltd. Method of etching silicon substrate at different etching rates for different planes of the silicon to form an air bridge
JP2006147946A (en) * 2004-11-22 2006-06-08 Seiko Epson Corp Etching liquid and its production process, and manufacturing process of liquid ejection head

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4885084A (en) * 1972-01-27 1973-11-12
JPS4940389A (en) * 1972-08-28 1974-04-15

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4885084A (en) * 1972-01-27 1973-11-12
JPS4940389A (en) * 1972-08-28 1974-04-15

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53148976A (en) * 1977-05-31 1978-12-26 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS6216020B2 (en) * 1977-05-31 1987-04-10 Mitsubishi Electric Corp
JPS542666A (en) * 1977-06-08 1979-01-10 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS6216547B2 (en) * 1977-06-08 1987-04-13 Mitsubishi Electric Corp
US4698131A (en) * 1985-12-13 1987-10-06 Xerox Corporation Replaceable image sensor array
US5683546A (en) * 1992-10-23 1997-11-04 Ricoh Seiki Company, Ltd. Method of etching silicon substrate at different etching rates for different planes of the silicon to form an air bridge
US5484507A (en) * 1993-12-01 1996-01-16 Ford Motor Company Self compensating process for aligning an aperture with crystal planes in a substrate
JP2006147946A (en) * 2004-11-22 2006-06-08 Seiko Epson Corp Etching liquid and its production process, and manufacturing process of liquid ejection head
JP4552616B2 (en) * 2004-11-22 2010-09-29 セイコーエプソン株式会社 Etching liquid and method for manufacturing the same, and method for manufacturing liquid jet head

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