JPS5478980A - Anisotropic etching method - Google Patents
Anisotropic etching methodInfo
- Publication number
- JPS5478980A JPS5478980A JP14603077A JP14603077A JPS5478980A JP S5478980 A JPS5478980 A JP S5478980A JP 14603077 A JP14603077 A JP 14603077A JP 14603077 A JP14603077 A JP 14603077A JP S5478980 A JPS5478980 A JP S5478980A
- Authority
- JP
- Japan
- Prior art keywords
- crossing
- groove
- anisotropic etching
- shaped
- etching method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To form the separation grooves of good shape, by taking greater the compensation angle of the etching mask placed at the crossing of V groove than that at T shaped or L shaped crossing.
CONSTITUTION: On the Si substrate at (100) plane, SiO2 etching mask 13 is formed, and to the width C of the separation grooves 14 C=120 μm, the compensation angle 12 is a=55 μm and b=110 μm for the part A, and a=45 μm and b=90 μm for the parts B and C. Etching is made with anisotropic etching solution, and the V groove 14 surrouned with (111) plane is formed to (110). With this method, the V groove of mesh shape having the crossing of cross, T and L shaped manner can correctly be formed.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14603077A JPS5478980A (en) | 1977-12-07 | 1977-12-07 | Anisotropic etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14603077A JPS5478980A (en) | 1977-12-07 | 1977-12-07 | Anisotropic etching method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5478980A true JPS5478980A (en) | 1979-06-23 |
Family
ID=15398507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14603077A Pending JPS5478980A (en) | 1977-12-07 | 1977-12-07 | Anisotropic etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5478980A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57193043A (en) * | 1981-05-22 | 1982-11-27 | Jido Keisoku Gijutsu Kenkiyuukumiai | Manufacture of insulator isolated substrate |
| JPS58147A (en) * | 1981-05-22 | 1983-01-05 | Jido Keisoku Gijutsu Kenkiyuukumiai | Manufacture of insulation isolating substrate |
| KR100414199B1 (en) * | 2001-01-05 | 2004-01-07 | 주식회사 오랜텍 | Method of fabricating a structure of silicon wafer using wet etching |
| JP2016157849A (en) * | 2015-02-25 | 2016-09-01 | 三島光産株式会社 | Manufacturing method of protrusion arrangement member, protrusion arrangement member obtained by that manufacturing method, and manufacturing method of protrusion arrangement member molding die using protrusion arrangement member |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52123171A (en) * | 1976-04-09 | 1977-10-17 | Hitachi Ltd | Anisotropic etching method of semiconductor single crystal |
-
1977
- 1977-12-07 JP JP14603077A patent/JPS5478980A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52123171A (en) * | 1976-04-09 | 1977-10-17 | Hitachi Ltd | Anisotropic etching method of semiconductor single crystal |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57193043A (en) * | 1981-05-22 | 1982-11-27 | Jido Keisoku Gijutsu Kenkiyuukumiai | Manufacture of insulator isolated substrate |
| JPS58147A (en) * | 1981-05-22 | 1983-01-05 | Jido Keisoku Gijutsu Kenkiyuukumiai | Manufacture of insulation isolating substrate |
| KR100414199B1 (en) * | 2001-01-05 | 2004-01-07 | 주식회사 오랜텍 | Method of fabricating a structure of silicon wafer using wet etching |
| JP2016157849A (en) * | 2015-02-25 | 2016-09-01 | 三島光産株式会社 | Manufacturing method of protrusion arrangement member, protrusion arrangement member obtained by that manufacturing method, and manufacturing method of protrusion arrangement member molding die using protrusion arrangement member |
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