JPS5243385A - Process for production of semiconductor integrated circuit - Google Patents

Process for production of semiconductor integrated circuit

Info

Publication number
JPS5243385A
JPS5243385A JP11773775A JP11773775A JPS5243385A JP S5243385 A JPS5243385 A JP S5243385A JP 11773775 A JP11773775 A JP 11773775A JP 11773775 A JP11773775 A JP 11773775A JP S5243385 A JPS5243385 A JP S5243385A
Authority
JP
Japan
Prior art keywords
production
integrated circuit
semiconductor integrated
mos
depressions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11773775A
Other languages
Japanese (ja)
Inventor
Kaoru Niino
Norio Anzai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11773775A priority Critical patent/JPS5243385A/en
Publication of JPS5243385A publication Critical patent/JPS5243385A/en
Pending legal-status Critical Current

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  • Element Separation (AREA)

Abstract

PURPOSE: To selectively form depressions in a semiconductor substrate by anisotropic etching, and form an epitaxial layer over them to flatten the substrate surface including these depressions, then form each element region, thereby facilitating the formation of MOS or C-MOS.
COPYRIGHT: (C)1977,JPO&Japio
JP11773775A 1975-10-01 1975-10-01 Process for production of semiconductor integrated circuit Pending JPS5243385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11773775A JPS5243385A (en) 1975-10-01 1975-10-01 Process for production of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11773775A JPS5243385A (en) 1975-10-01 1975-10-01 Process for production of semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5243385A true JPS5243385A (en) 1977-04-05

Family

ID=14719035

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11773775A Pending JPS5243385A (en) 1975-10-01 1975-10-01 Process for production of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5243385A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4820653A (en) * 1988-02-12 1989-04-11 American Telephone And Telegraph Company Technique for fabricating complementary dielectrically isolated wafer
JPH02200280A (en) * 1989-01-30 1990-08-08 Raibu Art:Kk Method for deciding goal time of runner
US5001075A (en) * 1989-04-03 1991-03-19 Motorola Fabrication of dielectrically isolated semiconductor device
US5422299A (en) * 1989-09-11 1995-06-06 Purdue Research Foundation Method of forming single crystalline electrical isolated wells

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48102582A (en) * 1972-04-03 1973-12-22

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48102582A (en) * 1972-04-03 1973-12-22

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4820653A (en) * 1988-02-12 1989-04-11 American Telephone And Telegraph Company Technique for fabricating complementary dielectrically isolated wafer
JPH02200280A (en) * 1989-01-30 1990-08-08 Raibu Art:Kk Method for deciding goal time of runner
US5001075A (en) * 1989-04-03 1991-03-19 Motorola Fabrication of dielectrically isolated semiconductor device
US5422299A (en) * 1989-09-11 1995-06-06 Purdue Research Foundation Method of forming single crystalline electrical isolated wells

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