JPS5269571A - Thermal oxidation method for semiconductor wafer - Google Patents

Thermal oxidation method for semiconductor wafer

Info

Publication number
JPS5269571A
JPS5269571A JP14503075A JP14503075A JPS5269571A JP S5269571 A JPS5269571 A JP S5269571A JP 14503075 A JP14503075 A JP 14503075A JP 14503075 A JP14503075 A JP 14503075A JP S5269571 A JPS5269571 A JP S5269571A
Authority
JP
Japan
Prior art keywords
semiconductor wafer
thermal oxidation
oxidation method
crystal
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14503075A
Other languages
Japanese (ja)
Inventor
Takaaki Aoshima
Akira Yoshinaka
Yoshimitsu Sugita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14503075A priority Critical patent/JPS5269571A/en
Publication of JPS5269571A publication Critical patent/JPS5269571A/en
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: When thermal oxidation film is formed on semiconductor wafer surface in thermal oxidation method for semiconductor wafer, poly crystal Si layer is formed on rear surface. In this method, crystal defect is never produced to the semiconductor wafer.
COPYRIGHT: (C)1977,JPO&Japio
JP14503075A 1975-12-08 1975-12-08 Thermal oxidation method for semiconductor wafer Pending JPS5269571A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14503075A JPS5269571A (en) 1975-12-08 1975-12-08 Thermal oxidation method for semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14503075A JPS5269571A (en) 1975-12-08 1975-12-08 Thermal oxidation method for semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS5269571A true JPS5269571A (en) 1977-06-09

Family

ID=15375776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14503075A Pending JPS5269571A (en) 1975-12-08 1975-12-08 Thermal oxidation method for semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS5269571A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6249628A (en) * 1986-03-24 1987-03-04 Sony Corp Semiconductor device
JPH0529324A (en) * 1991-07-22 1993-02-05 Mitsubishi Materials Corp Manufacture of silicon wafer
US6620632B2 (en) 2000-04-06 2003-09-16 Seh America, Inc. Method for evaluating impurity concentrations in semiconductor substrates

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6249628A (en) * 1986-03-24 1987-03-04 Sony Corp Semiconductor device
JPH0529324A (en) * 1991-07-22 1993-02-05 Mitsubishi Materials Corp Manufacture of silicon wafer
US6620632B2 (en) 2000-04-06 2003-09-16 Seh America, Inc. Method for evaluating impurity concentrations in semiconductor substrates

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