JPS5269571A - Thermal oxidation method for semiconductor wafer - Google Patents
Thermal oxidation method for semiconductor waferInfo
- Publication number
- JPS5269571A JPS5269571A JP14503075A JP14503075A JPS5269571A JP S5269571 A JPS5269571 A JP S5269571A JP 14503075 A JP14503075 A JP 14503075A JP 14503075 A JP14503075 A JP 14503075A JP S5269571 A JPS5269571 A JP S5269571A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- thermal oxidation
- oxidation method
- crystal
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: When thermal oxidation film is formed on semiconductor wafer surface in thermal oxidation method for semiconductor wafer, poly crystal Si layer is formed on rear surface. In this method, crystal defect is never produced to the semiconductor wafer.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14503075A JPS5269571A (en) | 1975-12-08 | 1975-12-08 | Thermal oxidation method for semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14503075A JPS5269571A (en) | 1975-12-08 | 1975-12-08 | Thermal oxidation method for semiconductor wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5269571A true JPS5269571A (en) | 1977-06-09 |
Family
ID=15375776
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14503075A Pending JPS5269571A (en) | 1975-12-08 | 1975-12-08 | Thermal oxidation method for semiconductor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5269571A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6249628A (en) * | 1986-03-24 | 1987-03-04 | Sony Corp | Semiconductor device |
JPH0529324A (en) * | 1991-07-22 | 1993-02-05 | Mitsubishi Materials Corp | Manufacture of silicon wafer |
US6620632B2 (en) | 2000-04-06 | 2003-09-16 | Seh America, Inc. | Method for evaluating impurity concentrations in semiconductor substrates |
-
1975
- 1975-12-08 JP JP14503075A patent/JPS5269571A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6249628A (en) * | 1986-03-24 | 1987-03-04 | Sony Corp | Semiconductor device |
JPH0529324A (en) * | 1991-07-22 | 1993-02-05 | Mitsubishi Materials Corp | Manufacture of silicon wafer |
US6620632B2 (en) | 2000-04-06 | 2003-09-16 | Seh America, Inc. | Method for evaluating impurity concentrations in semiconductor substrates |
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