JPS5228873A - Method for production of the cubic structure consisting of the semicon ductive crystal and the semiconductive device made of it's cubic struc ture - Google Patents

Method for production of the cubic structure consisting of the semicon ductive crystal and the semiconductive device made of it's cubic struc ture

Info

Publication number
JPS5228873A
JPS5228873A JP10406175A JP10406175A JPS5228873A JP S5228873 A JPS5228873 A JP S5228873A JP 10406175 A JP10406175 A JP 10406175A JP 10406175 A JP10406175 A JP 10406175A JP S5228873 A JPS5228873 A JP S5228873A
Authority
JP
Japan
Prior art keywords
cubic
crystal
production
structure consisting
device made
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10406175A
Other languages
Japanese (ja)
Other versions
JPS571157B2 (en
Inventor
Yasuo Tarui
Yoshio Komiya
Suminori Sakamoto
Hideyo Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP10406175A priority Critical patent/JPS5228873A/en
Publication of JPS5228873A publication Critical patent/JPS5228873A/en
Publication of JPS571157B2 publication Critical patent/JPS571157B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Weting (AREA)

Abstract

PURPOSE: To form a now etching in the other direction from the direction which is decided by the mask on the surface of mono-crystal to make a cubic structure having a flat side.
COPYRIGHT: (C)1977,JPO&Japio
JP10406175A 1975-08-29 1975-08-29 Method for production of the cubic structure consisting of the semicon ductive crystal and the semiconductive device made of it's cubic struc ture Granted JPS5228873A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10406175A JPS5228873A (en) 1975-08-29 1975-08-29 Method for production of the cubic structure consisting of the semicon ductive crystal and the semiconductive device made of it's cubic struc ture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10406175A JPS5228873A (en) 1975-08-29 1975-08-29 Method for production of the cubic structure consisting of the semicon ductive crystal and the semiconductive device made of it's cubic struc ture

Publications (2)

Publication Number Publication Date
JPS5228873A true JPS5228873A (en) 1977-03-04
JPS571157B2 JPS571157B2 (en) 1982-01-09

Family

ID=14370654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10406175A Granted JPS5228873A (en) 1975-08-29 1975-08-29 Method for production of the cubic structure consisting of the semicon ductive crystal and the semiconductive device made of it's cubic struc ture

Country Status (1)

Country Link
JP (1) JPS5228873A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6220326A (en) * 1985-07-15 1987-01-28 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6220326A (en) * 1985-07-15 1987-01-28 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS571157B2 (en) 1982-01-09

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