JPS53148976A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS53148976A
JPS53148976A JP6417777A JP6417777A JPS53148976A JP S53148976 A JPS53148976 A JP S53148976A JP 6417777 A JP6417777 A JP 6417777A JP 6417777 A JP6417777 A JP 6417777A JP S53148976 A JPS53148976 A JP S53148976A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
insulator film
crossing angle
circumferences
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6417777A
Other languages
Japanese (ja)
Other versions
JPS6216020B2 (en
Inventor
Tadashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6417777A priority Critical patent/JPS53148976A/en
Publication of JPS53148976A publication Critical patent/JPS53148976A/en
Publication of JPS6216020B2 publication Critical patent/JPS6216020B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To avoid the intrusion of the oxide layer due to a selective oxidation by dividing the crossing angle between the two circumferences of an insulator film mask into the angles smaller than 270° in case the crossing angle shows more than 270° at the side of the insulator film.
COPYRIGHT: (C)1978,JPO&Japio
JP6417777A 1977-05-31 1977-05-31 Manufacture of semiconductor device Granted JPS53148976A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6417777A JPS53148976A (en) 1977-05-31 1977-05-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6417777A JPS53148976A (en) 1977-05-31 1977-05-31 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS53148976A true JPS53148976A (en) 1978-12-26
JPS6216020B2 JPS6216020B2 (en) 1987-04-10

Family

ID=13250510

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6417777A Granted JPS53148976A (en) 1977-05-31 1977-05-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS53148976A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0396214U (en) * 1990-01-22 1991-10-01

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5243370A (en) * 1975-10-01 1977-04-05 Hitachi Ltd Method of forming depression in semiconductor substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5243370A (en) * 1975-10-01 1977-04-05 Hitachi Ltd Method of forming depression in semiconductor substrate

Also Published As

Publication number Publication date
JPS6216020B2 (en) 1987-04-10

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