JPS5271978A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5271978A JPS5271978A JP14798775A JP14798775A JPS5271978A JP S5271978 A JPS5271978 A JP S5271978A JP 14798775 A JP14798775 A JP 14798775A JP 14798775 A JP14798775 A JP 14798775A JP S5271978 A JPS5271978 A JP S5271978A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- photo resist
- resist film
- portions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To discontinuously isolate the required portions and unrequired portions of the electrode wiring formed and obtain good wiring patterns by making a second photo resist film in a structure wherein it overhangs from the end of a metal or metal oxide film and a first photo resist film.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14798775A JPS5271978A (en) | 1975-12-11 | 1975-12-11 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14798775A JPS5271978A (en) | 1975-12-11 | 1975-12-11 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5271978A true JPS5271978A (en) | 1977-06-15 |
Family
ID=15442590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14798775A Pending JPS5271978A (en) | 1975-12-11 | 1975-12-11 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5271978A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52147063A (en) * | 1976-06-02 | 1977-12-07 | Toshiba Corp | Semiconductor electrode forming method |
JPS55125627A (en) * | 1979-03-22 | 1980-09-27 | Hitachi Ltd | Formation of electrode for semiconductor device |
JPS5749230A (en) * | 1980-09-08 | 1982-03-23 | Matsushita Electronics Corp | Forming method for electrode |
US5185277A (en) * | 1990-06-12 | 1993-02-09 | Thomson Composants Microondes | Method for the making of a transistor gate |
-
1975
- 1975-12-11 JP JP14798775A patent/JPS5271978A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52147063A (en) * | 1976-06-02 | 1977-12-07 | Toshiba Corp | Semiconductor electrode forming method |
JPS5510973B2 (en) * | 1976-06-02 | 1980-03-21 | ||
JPS55125627A (en) * | 1979-03-22 | 1980-09-27 | Hitachi Ltd | Formation of electrode for semiconductor device |
JPS5749230A (en) * | 1980-09-08 | 1982-03-23 | Matsushita Electronics Corp | Forming method for electrode |
US5185277A (en) * | 1990-06-12 | 1993-02-09 | Thomson Composants Microondes | Method for the making of a transistor gate |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5271978A (en) | Production of semiconductor device | |
JPS5363871A (en) | Production of semiconductor device | |
JPS5272571A (en) | Production of semiconductor device | |
JPS52153383A (en) | Preparation of semiconductor device | |
JPS5419367A (en) | Production of semiconductor device | |
JPS5240061A (en) | Semiconductor device and process for production of same | |
JPS5251872A (en) | Production of semiconductor device | |
JPS52150983A (en) | Production of semiconductor device | |
JPS5211772A (en) | Semiconductor device | |
JPS5377168A (en) | Production of semiconductor device | |
JPS52147084A (en) | Production of semiconductor device | |
JPS5271993A (en) | Production of semiconductor integrated circuit device | |
JPS51151089A (en) | Manufacturing method of a semiconductor | |
JPS5363866A (en) | Production of semiconductor device | |
JPS52135689A (en) | Production of semiconductor device | |
JPS542666A (en) | Manufacture of semiconductor device | |
JPS52143767A (en) | Production of semiconductor device | |
JPS53124993A (en) | Production of semiconductor device | |
JPS5361968A (en) | Production of semiconductor device | |
JPS522293A (en) | Method of formig wiring layer | |
JPS5283063A (en) | Production of semiconductor device | |
JPS5315788A (en) | Production of semiconductor device | |
JPS5260083A (en) | Production of semiconductor device | |
JPS5271986A (en) | Beam lead type semiconductor device | |
JPS5435683A (en) | Manufacture of semiconductor device |