JPS5271978A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5271978A
JPS5271978A JP14798775A JP14798775A JPS5271978A JP S5271978 A JPS5271978 A JP S5271978A JP 14798775 A JP14798775 A JP 14798775A JP 14798775 A JP14798775 A JP 14798775A JP S5271978 A JPS5271978 A JP S5271978A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
photo resist
resist film
portions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14798775A
Other languages
Japanese (ja)
Inventor
Kiyoto Iida
Takashi Okuda
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP14798775A priority Critical patent/JPS5271978A/en
Publication of JPS5271978A publication Critical patent/JPS5271978A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To discontinuously isolate the required portions and unrequired portions of the electrode wiring formed and obtain good wiring patterns by making a second photo resist film in a structure wherein it overhangs from the end of a metal or metal oxide film and a first photo resist film.
COPYRIGHT: (C)1977,JPO&Japio
JP14798775A 1975-12-11 1975-12-11 Production of semiconductor device Pending JPS5271978A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14798775A JPS5271978A (en) 1975-12-11 1975-12-11 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14798775A JPS5271978A (en) 1975-12-11 1975-12-11 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5271978A true JPS5271978A (en) 1977-06-15

Family

ID=15442590

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14798775A Pending JPS5271978A (en) 1975-12-11 1975-12-11 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5271978A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52147063A (en) * 1976-06-02 1977-12-07 Toshiba Corp Semiconductor electrode forming method
JPS55125627A (en) * 1979-03-22 1980-09-27 Hitachi Ltd Formation of electrode for semiconductor device
JPS5749230A (en) * 1980-09-08 1982-03-23 Matsushita Electronics Corp Forming method for electrode
US5185277A (en) * 1990-06-12 1993-02-09 Thomson Composants Microondes Method for the making of a transistor gate

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52147063A (en) * 1976-06-02 1977-12-07 Toshiba Corp Semiconductor electrode forming method
JPS5510973B2 (en) * 1976-06-02 1980-03-21
JPS55125627A (en) * 1979-03-22 1980-09-27 Hitachi Ltd Formation of electrode for semiconductor device
JPS5749230A (en) * 1980-09-08 1982-03-23 Matsushita Electronics Corp Forming method for electrode
US5185277A (en) * 1990-06-12 1993-02-09 Thomson Composants Microondes Method for the making of a transistor gate

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