JPS5253666A - Method of preventing impurity diffusion from doped oxide - Google Patents

Method of preventing impurity diffusion from doped oxide

Info

Publication number
JPS5253666A
JPS5253666A JP50129208A JP12920875A JPS5253666A JP S5253666 A JPS5253666 A JP S5253666A JP 50129208 A JP50129208 A JP 50129208A JP 12920875 A JP12920875 A JP 12920875A JP S5253666 A JPS5253666 A JP S5253666A
Authority
JP
Japan
Prior art keywords
impurity diffusion
doped oxide
preventing impurity
preventing
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50129208A
Other languages
Japanese (ja)
Inventor
Shozo Hosoda
Katsumi Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50129208A priority Critical patent/JPS5253666A/en
Priority to NL7611929A priority patent/NL7611929A/en
Publication of JPS5253666A publication Critical patent/JPS5253666A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To prevent thermal diffusion of P and flatten the surface of a substrate by forming a PSG film via non-doped SiO2 film on the semiconductor substrate.
COPYRIGHT: (C)1977,JPO&Japio
JP50129208A 1975-10-29 1975-10-29 Method of preventing impurity diffusion from doped oxide Pending JPS5253666A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP50129208A JPS5253666A (en) 1975-10-29 1975-10-29 Method of preventing impurity diffusion from doped oxide
NL7611929A NL7611929A (en) 1975-10-29 1976-10-27 PROCEDURE FOR THE MANUFACTURE OF A HALFGE-LEADER DEVICE AND HALFGE-LEADER DEVICE OBTAINED THEREFORE.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50129208A JPS5253666A (en) 1975-10-29 1975-10-29 Method of preventing impurity diffusion from doped oxide

Publications (1)

Publication Number Publication Date
JPS5253666A true JPS5253666A (en) 1977-04-30

Family

ID=15003796

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50129208A Pending JPS5253666A (en) 1975-10-29 1975-10-29 Method of preventing impurity diffusion from doped oxide

Country Status (2)

Country Link
JP (1) JPS5253666A (en)
NL (1) NL7611929A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5384572A (en) * 1976-12-29 1978-07-26 Fujitsu Ltd Manufacture for mis type semiconductor device
JPS53103380A (en) * 1977-02-22 1978-09-08 Oki Electric Ind Co Ltd Production of semiconductor device
JPS58168240A (en) * 1982-03-30 1983-10-04 Fujitsu Ltd Semiconductor device
JPS60183763A (en) * 1984-03-02 1985-09-19 Rohm Co Ltd Semiconductor device
JPS61214555A (en) * 1985-03-20 1986-09-24 Hitachi Ltd Semiconductor device
JPS6362380A (en) * 1986-09-03 1988-03-18 Mitsubishi Electric Corp Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6165833A (en) * 1997-12-19 2000-12-26 Micron Technology, Inc. Semiconductor processing method of forming a capacitor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5384572A (en) * 1976-12-29 1978-07-26 Fujitsu Ltd Manufacture for mis type semiconductor device
JPS53103380A (en) * 1977-02-22 1978-09-08 Oki Electric Ind Co Ltd Production of semiconductor device
JPS58168240A (en) * 1982-03-30 1983-10-04 Fujitsu Ltd Semiconductor device
JPS60183763A (en) * 1984-03-02 1985-09-19 Rohm Co Ltd Semiconductor device
JPS61214555A (en) * 1985-03-20 1986-09-24 Hitachi Ltd Semiconductor device
JPS6362380A (en) * 1986-09-03 1988-03-18 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
NL7611929A (en) 1977-05-03

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