JPS53103380A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS53103380A
JPS53103380A JP1775477A JP1775477A JPS53103380A JP S53103380 A JPS53103380 A JP S53103380A JP 1775477 A JP1775477 A JP 1775477A JP 1775477 A JP1775477 A JP 1775477A JP S53103380 A JPS53103380 A JP S53103380A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
film
gate
avert
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1775477A
Other languages
Japanese (ja)
Inventor
Tadashi Mori
Akihisa Aoki
Masayoshi Ino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP1775477A priority Critical patent/JPS53103380A/en
Publication of JPS53103380A publication Critical patent/JPS53103380A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To avert the degradation in gate insulation dielectric strength by covering the surface of gate, source and drain regions with a thermal oxide film and further forming a PSG film as an intermediate film thereby flattening the surface.
COPYRIGHT: (C)1978,JPO&Japio
JP1775477A 1977-02-22 1977-02-22 Production of semiconductor device Pending JPS53103380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1775477A JPS53103380A (en) 1977-02-22 1977-02-22 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1775477A JPS53103380A (en) 1977-02-22 1977-02-22 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS53103380A true JPS53103380A (en) 1978-09-08

Family

ID=11952510

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1775477A Pending JPS53103380A (en) 1977-02-22 1977-02-22 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS53103380A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4849382A (en) * 1971-10-22 1973-07-12
JPS4933580A (en) * 1972-07-26 1974-03-28
JPS506143A (en) * 1973-05-21 1975-01-22
JPS5066182A (en) * 1973-10-12 1975-06-04
JPS5253666A (en) * 1975-10-29 1977-04-30 Hitachi Ltd Method of preventing impurity diffusion from doped oxide

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4849382A (en) * 1971-10-22 1973-07-12
JPS4933580A (en) * 1972-07-26 1974-03-28
JPS506143A (en) * 1973-05-21 1975-01-22
JPS5066182A (en) * 1973-10-12 1975-06-04
JPS5253666A (en) * 1975-10-29 1977-04-30 Hitachi Ltd Method of preventing impurity diffusion from doped oxide

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