JPS5389375A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5389375A
JPS5389375A JP377077A JP377077A JPS5389375A JP S5389375 A JPS5389375 A JP S5389375A JP 377077 A JP377077 A JP 377077A JP 377077 A JP377077 A JP 377077A JP S5389375 A JPS5389375 A JP S5389375A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
gate
polycrystalline
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP377077A
Other languages
Japanese (ja)
Inventor
Kunio Nakamura
Yoshiharu Fujimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP377077A priority Critical patent/JPS5389375A/en
Publication of JPS5389375A publication Critical patent/JPS5389375A/en
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To reduce stepping by gate electrode layers and improve yield by providing a gate insulation film and a polycrystalline Si layer in lamination on a semiconductor substrate, using part of the polycrystalline layer as a gate and converting the other portion to oxide.
COPYRIGHT: (C)1978,JPO&Japio
JP377077A 1977-01-17 1977-01-17 Production of semiconductor device Pending JPS5389375A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP377077A JPS5389375A (en) 1977-01-17 1977-01-17 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP377077A JPS5389375A (en) 1977-01-17 1977-01-17 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5389375A true JPS5389375A (en) 1978-08-05

Family

ID=11566398

Family Applications (1)

Application Number Title Priority Date Filing Date
JP377077A Pending JPS5389375A (en) 1977-01-17 1977-01-17 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5389375A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5544725A (en) * 1978-09-27 1980-03-29 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device and its manufacture
JP2005086198A (en) * 2003-09-05 2005-03-31 Hynix Semiconductor Inc Method of manufacturing flash memory device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5544725A (en) * 1978-09-27 1980-03-29 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device and its manufacture
JP2005086198A (en) * 2003-09-05 2005-03-31 Hynix Semiconductor Inc Method of manufacturing flash memory device
JP4624014B2 (en) * 2003-09-05 2011-02-02 株式会社ハイニックスセミコンダクター Method for manufacturing flash memory device

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