JPS5327372A - Production of s emiconductor device - Google Patents
Production of s emiconductor deviceInfo
- Publication number
- JPS5327372A JPS5327372A JP10165676A JP10165676A JPS5327372A JP S5327372 A JPS5327372 A JP S5327372A JP 10165676 A JP10165676 A JP 10165676A JP 10165676 A JP10165676 A JP 10165676A JP S5327372 A JPS5327372 A JP S5327372A
- Authority
- JP
- Japan
- Prior art keywords
- production
- poly
- layer
- film
- emiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To produce a high breakdown voltage semiconductor device by self-alignment, by providing a poly-Si layer added with high concentration phosphorus and an island of Si3N4 film on the thin oxide film on the N-type Si substrate, and forming thick thermaloxidation films on the sides of the poly-Si layer.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10165676A JPS5327372A (en) | 1976-08-27 | 1976-08-27 | Production of s emiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10165676A JPS5327372A (en) | 1976-08-27 | 1976-08-27 | Production of s emiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5327372A true JPS5327372A (en) | 1978-03-14 |
Family
ID=14306414
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10165676A Pending JPS5327372A (en) | 1976-08-27 | 1976-08-27 | Production of s emiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5327372A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5814541A (en) * | 1987-12-04 | 1998-09-29 | Kabushiki Kaisha Toshiba | Method for manufacturing semiconductor device |
-
1976
- 1976-08-27 JP JP10165676A patent/JPS5327372A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5814541A (en) * | 1987-12-04 | 1998-09-29 | Kabushiki Kaisha Toshiba | Method for manufacturing semiconductor device |
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