JPS5327372A - Production of s emiconductor device - Google Patents

Production of s emiconductor device

Info

Publication number
JPS5327372A
JPS5327372A JP10165676A JP10165676A JPS5327372A JP S5327372 A JPS5327372 A JP S5327372A JP 10165676 A JP10165676 A JP 10165676A JP 10165676 A JP10165676 A JP 10165676A JP S5327372 A JPS5327372 A JP S5327372A
Authority
JP
Japan
Prior art keywords
production
poly
layer
film
emiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10165676A
Other languages
Japanese (ja)
Inventor
Hideo Sunami
Yoshiaki Kamigaki
Tetsukazu Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10165676A priority Critical patent/JPS5327372A/en
Publication of JPS5327372A publication Critical patent/JPS5327372A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To produce a high breakdown voltage semiconductor device by self-alignment, by providing a poly-Si layer added with high concentration phosphorus and an island of Si3N4 film on the thin oxide film on the N-type Si substrate, and forming thick thermaloxidation films on the sides of the poly-Si layer.
COPYRIGHT: (C)1978,JPO&Japio
JP10165676A 1976-08-27 1976-08-27 Production of s emiconductor device Pending JPS5327372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10165676A JPS5327372A (en) 1976-08-27 1976-08-27 Production of s emiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10165676A JPS5327372A (en) 1976-08-27 1976-08-27 Production of s emiconductor device

Publications (1)

Publication Number Publication Date
JPS5327372A true JPS5327372A (en) 1978-03-14

Family

ID=14306414

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10165676A Pending JPS5327372A (en) 1976-08-27 1976-08-27 Production of s emiconductor device

Country Status (1)

Country Link
JP (1) JPS5327372A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5814541A (en) * 1987-12-04 1998-09-29 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5814541A (en) * 1987-12-04 1998-09-29 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device

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