JPS53141591A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS53141591A
JPS53141591A JP5671977A JP5671977A JPS53141591A JP S53141591 A JPS53141591 A JP S53141591A JP 5671977 A JP5671977 A JP 5671977A JP 5671977 A JP5671977 A JP 5671977A JP S53141591 A JPS53141591 A JP S53141591A
Authority
JP
Japan
Prior art keywords
film
base region
manufacture
semiconductor device
poly crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5671977A
Other languages
Japanese (ja)
Other versions
JPS6330787B2 (en
Inventor
Fujiki Tokuyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5671977A priority Critical patent/JPS53141591A/en
Publication of JPS53141591A publication Critical patent/JPS53141591A/en
Publication of JPS6330787B2 publication Critical patent/JPS6330787B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To obtain a high-speed transistor of a low base resistance by coating the poly crystal Si film on the semicondctor substrate, providing an external base region of a low resistivity, and forming an intrinsic base region under the external base region thorugh injection of the impurity ion after giving a selective oxidation to the poly crystal film by means of Si3N4 film.
COPYRIGHT: (C)1978,JPO&Japio
JP5671977A 1977-05-16 1977-05-16 Manufacture of semiconductor device Granted JPS53141591A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5671977A JPS53141591A (en) 1977-05-16 1977-05-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5671977A JPS53141591A (en) 1977-05-16 1977-05-16 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS53141591A true JPS53141591A (en) 1978-12-09
JPS6330787B2 JPS6330787B2 (en) 1988-06-21

Family

ID=13035286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5671977A Granted JPS53141591A (en) 1977-05-16 1977-05-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS53141591A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5518387U (en) * 1978-07-25 1980-02-05
JPS5530807A (en) * 1978-08-25 1980-03-04 Hitachi Ltd Producing method of semiconductor device
JPS5763856A (en) * 1980-10-07 1982-04-17 Oki Electric Ind Co Ltd Preparationof semiconductor element
JPS58106865A (en) * 1981-12-19 1983-06-25 Oki Electric Ind Co Ltd Manufacture of semiconductor element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6135705A (en) * 1984-07-26 1986-02-20 株式会社富士トレーラー製作所 Soil build-up apparatus of rice field ridge shaping machine

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6135705A (en) * 1984-07-26 1986-02-20 株式会社富士トレーラー製作所 Soil build-up apparatus of rice field ridge shaping machine

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5518387U (en) * 1978-07-25 1980-02-05
JPS5530807A (en) * 1978-08-25 1980-03-04 Hitachi Ltd Producing method of semiconductor device
JPS5763856A (en) * 1980-10-07 1982-04-17 Oki Electric Ind Co Ltd Preparationof semiconductor element
JPS58106865A (en) * 1981-12-19 1983-06-25 Oki Electric Ind Co Ltd Manufacture of semiconductor element
JPH0128509B2 (en) * 1981-12-19 1989-06-02 Oki Electric Ind Co Ltd

Also Published As

Publication number Publication date
JPS6330787B2 (en) 1988-06-21

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