JPS53119685A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS53119685A
JPS53119685A JP3557377A JP3557377A JPS53119685A JP S53119685 A JPS53119685 A JP S53119685A JP 3557377 A JP3557377 A JP 3557377A JP 3557377 A JP3557377 A JP 3557377A JP S53119685 A JPS53119685 A JP S53119685A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
doping
impurity
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3557377A
Other languages
Japanese (ja)
Inventor
Tsutomu Fujita
Tadanaka Yoneda
Toyoki Takemoto
Haruyasu Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3557377A priority Critical patent/JPS53119685A/en
Publication of JPS53119685A publication Critical patent/JPS53119685A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To make graft bases by doping an impurity through the poly-Si film selectively formed on a Si substrate, performing heat-treatment to provide base and emitter layers and performing thermal oxidation by using a Si3N4 mask.
COPYRIGHT: (C)1978,JPO&Japio
JP3557377A 1977-03-29 1977-03-29 Production of semiconductor device Pending JPS53119685A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3557377A JPS53119685A (en) 1977-03-29 1977-03-29 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3557377A JPS53119685A (en) 1977-03-29 1977-03-29 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS53119685A true JPS53119685A (en) 1978-10-19

Family

ID=12445491

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3557377A Pending JPS53119685A (en) 1977-03-29 1977-03-29 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS53119685A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59198758A (en) * 1983-04-26 1984-11-10 Nec Corp Manufacture of semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4982281A (en) * 1972-12-11 1974-08-08
JPS5154365A (en) * 1974-11-06 1976-05-13 Mitsubishi Electric Corp Handotaisochino seizohoho
JPS51130174A (en) * 1975-05-06 1976-11-12 Matsushita Electric Ind Co Ltd Semiconductor device process

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4982281A (en) * 1972-12-11 1974-08-08
JPS5154365A (en) * 1974-11-06 1976-05-13 Mitsubishi Electric Corp Handotaisochino seizohoho
JPS51130174A (en) * 1975-05-06 1976-11-12 Matsushita Electric Ind Co Ltd Semiconductor device process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59198758A (en) * 1983-04-26 1984-11-10 Nec Corp Manufacture of semiconductor device

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