JPS5362984A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5362984A
JPS5362984A JP13891076A JP13891076A JPS5362984A JP S5362984 A JPS5362984 A JP S5362984A JP 13891076 A JP13891076 A JP 13891076A JP 13891076 A JP13891076 A JP 13891076A JP S5362984 A JPS5362984 A JP S5362984A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
base
emitter
ion implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13891076A
Other languages
Japanese (ja)
Other versions
JPS5526628B2 (en
Inventor
Tsutomu Fujita
Tadanaka Yoneda
Toyoki Takemoto
Haruyasu Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP13891076A priority Critical patent/JPS5362984A/en
Publication of JPS5362984A publication Critical patent/JPS5362984A/en
Publication of JPS5526628B2 publication Critical patent/JPS5526628B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To prevent shortcircuiting between base and emitter by lowering base resistance through ion implantation and providing electrodes on base-emitter regions through a polycrystalline layer.
COPYRIGHT: (C)1978,JPO&Japio
JP13891076A 1976-11-17 1976-11-17 Production of semiconductor device Granted JPS5362984A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13891076A JPS5362984A (en) 1976-11-17 1976-11-17 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13891076A JPS5362984A (en) 1976-11-17 1976-11-17 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5362984A true JPS5362984A (en) 1978-06-05
JPS5526628B2 JPS5526628B2 (en) 1980-07-15

Family

ID=15232986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13891076A Granted JPS5362984A (en) 1976-11-17 1976-11-17 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5362984A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54128683A (en) * 1978-03-27 1979-10-05 Ibm Method of fabricating emitterrbase matching bipolar transistor
KR101349549B1 (en) * 2012-07-19 2014-01-10 에스티엑스조선해양 주식회사 Method for assembling hydro nut of rudder stock low part

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5116312A (en) * 1974-07-10 1976-02-09 Takahama Industry WAGAWARASEIKEIKIHENO SOJIKYOKYUSOCHI

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5116312A (en) * 1974-07-10 1976-02-09 Takahama Industry WAGAWARASEIKEIKIHENO SOJIKYOKYUSOCHI

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54128683A (en) * 1978-03-27 1979-10-05 Ibm Method of fabricating emitterrbase matching bipolar transistor
KR101349549B1 (en) * 2012-07-19 2014-01-10 에스티엑스조선해양 주식회사 Method for assembling hydro nut of rudder stock low part

Also Published As

Publication number Publication date
JPS5526628B2 (en) 1980-07-15

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