JPS536578A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS536578A
JPS536578A JP8154576A JP8154576A JPS536578A JP S536578 A JPS536578 A JP S536578A JP 8154576 A JP8154576 A JP 8154576A JP 8154576 A JP8154576 A JP 8154576A JP S536578 A JPS536578 A JP S536578A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
layer
base
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8154576A
Other languages
Japanese (ja)
Inventor
Satoru Shoji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8154576A priority Critical patent/JPS536578A/en
Publication of JPS536578A publication Critical patent/JPS536578A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain high frequency transistors of a small base resistance and a high cut-off frequency fT by making a P type base layer in an N type collector layer, therein and providing a P+ layer in the base directly under the emitter through ion implantation.
COPYRIGHT: (C)1978,JPO&Japio
JP8154576A 1976-07-08 1976-07-08 Production of semiconductor device Pending JPS536578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8154576A JPS536578A (en) 1976-07-08 1976-07-08 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8154576A JPS536578A (en) 1976-07-08 1976-07-08 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS536578A true JPS536578A (en) 1978-01-21

Family

ID=13749252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8154576A Pending JPS536578A (en) 1976-07-08 1976-07-08 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS536578A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2480503A1 (en) * 1980-04-14 1981-10-16 Silicium Semiconducteur Ssc High power silicon switching transistor - has wide emitter fingers and orthogonal narrow low resistivity fingers buried in base region

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2480503A1 (en) * 1980-04-14 1981-10-16 Silicium Semiconducteur Ssc High power silicon switching transistor - has wide emitter fingers and orthogonal narrow low resistivity fingers buried in base region

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