JPS536578A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS536578A JPS536578A JP8154576A JP8154576A JPS536578A JP S536578 A JPS536578 A JP S536578A JP 8154576 A JP8154576 A JP 8154576A JP 8154576 A JP8154576 A JP 8154576A JP S536578 A JPS536578 A JP S536578A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- layer
- base
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To obtain high frequency transistors of a small base resistance and a high cut-off frequency fT by making a P type base layer in an N type collector layer, therein and providing a P+ layer in the base directly under the emitter through ion implantation.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8154576A JPS536578A (en) | 1976-07-08 | 1976-07-08 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8154576A JPS536578A (en) | 1976-07-08 | 1976-07-08 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS536578A true JPS536578A (en) | 1978-01-21 |
Family
ID=13749252
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8154576A Pending JPS536578A (en) | 1976-07-08 | 1976-07-08 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS536578A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2480503A1 (en) * | 1980-04-14 | 1981-10-16 | Silicium Semiconducteur Ssc | High power silicon switching transistor - has wide emitter fingers and orthogonal narrow low resistivity fingers buried in base region |
-
1976
- 1976-07-08 JP JP8154576A patent/JPS536578A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2480503A1 (en) * | 1980-04-14 | 1981-10-16 | Silicium Semiconducteur Ssc | High power silicon switching transistor - has wide emitter fingers and orthogonal narrow low resistivity fingers buried in base region |
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