JPS5530807A - Producing method of semiconductor device - Google Patents

Producing method of semiconductor device

Info

Publication number
JPS5530807A
JPS5530807A JP10272178A JP10272178A JPS5530807A JP S5530807 A JPS5530807 A JP S5530807A JP 10272178 A JP10272178 A JP 10272178A JP 10272178 A JP10272178 A JP 10272178A JP S5530807 A JPS5530807 A JP S5530807A
Authority
JP
Japan
Prior art keywords
layer
oxidized
area
polysilicon
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10272178A
Other languages
Japanese (ja)
Inventor
Takaaki Mori
Shuichi Nakamura
Takehisa Nitta
Hiroyuki Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10272178A priority Critical patent/JPS5530807A/en
Publication of JPS5530807A publication Critical patent/JPS5530807A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To perform easy control of a base layer by driving ion after selectively changing a polysilicon layer into an oxidized layer when making a base area in a semiconductor area surrounded by an isolation oxidized film.
CONSTITUTION: A polysilicon layer is set on a semiconductor area surface surrounded by an isolation oxidized film formed by selective oxidization. after the polysilicon layer part except for an emitter area and a basecontrol part is selectively changed into an oxidized film, ion is driven through the polysilicon layer and the oxidized layer to form a base diffusion area. Since the oxidization of polysilicon is thus performed before the formation of the base diffusion area, the effect due to heat treatment is prevented and the control of seat resistance and diffusion depth of the base diffusion layer is easily performed. After the above process, the ion driving with the almost same thickness of the polysilicon and oxidized layers produces a uniform base diffusion layer.
COPYRIGHT: (C)1980,JPO&Japio
JP10272178A 1978-08-25 1978-08-25 Producing method of semiconductor device Pending JPS5530807A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10272178A JPS5530807A (en) 1978-08-25 1978-08-25 Producing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10272178A JPS5530807A (en) 1978-08-25 1978-08-25 Producing method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5530807A true JPS5530807A (en) 1980-03-04

Family

ID=14335122

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10272178A Pending JPS5530807A (en) 1978-08-25 1978-08-25 Producing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5530807A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5796567A (en) * 1980-12-09 1982-06-15 Nec Corp Manufacture of semiconductor device
JPS5867060A (en) * 1981-10-19 1983-04-21 Oki Electric Ind Co Ltd Manufacture of semiconductor integrated circuit device
JPH0894A (en) * 1994-06-17 1996-01-09 Nippon Tetorapotsuto Kk Planted imitation rock for admiration
JPH09168335A (en) * 1995-12-21 1997-06-30 Yamatatsugumi:Kk Concrete block for planting
JP3039196U (en) * 1996-11-08 1997-07-11 稔 柿山 Planting equipment

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4077462A (en) * 1976-06-30 1978-03-07 Allied Chemical Corporation Chill roll casting of continuous filament
JPS53141591A (en) * 1977-05-16 1978-12-09 Nec Corp Manufacture of semiconductor device
JPS559425A (en) * 1978-07-07 1980-01-23 Oki Electric Ind Co Ltd Manufacturing method for semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4077462A (en) * 1976-06-30 1978-03-07 Allied Chemical Corporation Chill roll casting of continuous filament
JPS53141591A (en) * 1977-05-16 1978-12-09 Nec Corp Manufacture of semiconductor device
JPS559425A (en) * 1978-07-07 1980-01-23 Oki Electric Ind Co Ltd Manufacturing method for semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5796567A (en) * 1980-12-09 1982-06-15 Nec Corp Manufacture of semiconductor device
JPS5867060A (en) * 1981-10-19 1983-04-21 Oki Electric Ind Co Ltd Manufacture of semiconductor integrated circuit device
JPH0239092B2 (en) * 1981-10-19 1990-09-04 Oki Electric Ind Co Ltd
JPH0894A (en) * 1994-06-17 1996-01-09 Nippon Tetorapotsuto Kk Planted imitation rock for admiration
JPH09168335A (en) * 1995-12-21 1997-06-30 Yamatatsugumi:Kk Concrete block for planting
JP3039196U (en) * 1996-11-08 1997-07-11 稔 柿山 Planting equipment

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