JPS5320862A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5320862A
JPS5320862A JP9487876A JP9487876A JPS5320862A JP S5320862 A JPS5320862 A JP S5320862A JP 9487876 A JP9487876 A JP 9487876A JP 9487876 A JP9487876 A JP 9487876A JP S5320862 A JPS5320862 A JP S5320862A
Authority
JP
Japan
Prior art keywords
semiconductor device
production
decrease
oxide film
leakage current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9487876A
Other languages
Japanese (ja)
Inventor
Hirobumi Shimizu
Takaaki Aoshima
Akira Yoshinaka
Yoshimitsu Sugita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9487876A priority Critical patent/JPS5320862A/en
Publication of JPS5320862A publication Critical patent/JPS5320862A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a semiconductor device of good noise characteristics free from the decrease in breakdown voltage and the leakage current by suitably annealing the substrate provided with an oxide film in a non-oxidative atmosphere.
COPYRIGHT: (C)1978,JPO&Japio
JP9487876A 1976-08-11 1976-08-11 Production of semiconductor device Pending JPS5320862A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9487876A JPS5320862A (en) 1976-08-11 1976-08-11 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9487876A JPS5320862A (en) 1976-08-11 1976-08-11 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5320862A true JPS5320862A (en) 1978-02-25

Family

ID=14122299

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9487876A Pending JPS5320862A (en) 1976-08-11 1976-08-11 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5320862A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0030457A2 (en) * 1979-12-05 1981-06-17 VLSI Technology Research Association Method of manufacturing a silicon wafer with interior microdefects capable of gettering
JPS57159064A (en) * 1981-03-26 1982-10-01 Nec Home Electronics Ltd Semiconductor device
JPS57207366A (en) * 1981-06-15 1982-12-20 Fujitsu Ltd Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0030457A2 (en) * 1979-12-05 1981-06-17 VLSI Technology Research Association Method of manufacturing a silicon wafer with interior microdefects capable of gettering
JPS57159064A (en) * 1981-03-26 1982-10-01 Nec Home Electronics Ltd Semiconductor device
JPS57207366A (en) * 1981-06-15 1982-12-20 Fujitsu Ltd Manufacture of semiconductor device
JPH0516177B2 (en) * 1981-06-15 1993-03-03 Fujitsu Ltd

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