JPS52135273A - Mos type semiconductor device - Google Patents

Mos type semiconductor device

Info

Publication number
JPS52135273A
JPS52135273A JP5195976A JP5195976A JPS52135273A JP S52135273 A JPS52135273 A JP S52135273A JP 5195976 A JP5195976 A JP 5195976A JP 5195976 A JP5195976 A JP 5195976A JP S52135273 A JPS52135273 A JP S52135273A
Authority
JP
Japan
Prior art keywords
semiconductor device
type semiconductor
mos type
layer
thresholod
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5195976A
Other languages
Japanese (ja)
Inventor
Kyohiko Kotani
Satoru Kawazu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5195976A priority Critical patent/JPS52135273A/en
Publication of JPS52135273A publication Critical patent/JPS52135273A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To produce an LSI which operates correctly with short channels and does not cause the increase in thresholod voltage and substrate constant and the decrease in the dielectric strength of junctions by forming channel with a P+ layer and P-layer.
COPYRIGHT: (C)1977,JPO&Japio
JP5195976A 1976-05-06 1976-05-06 Mos type semiconductor device Pending JPS52135273A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5195976A JPS52135273A (en) 1976-05-06 1976-05-06 Mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5195976A JPS52135273A (en) 1976-05-06 1976-05-06 Mos type semiconductor device

Publications (1)

Publication Number Publication Date
JPS52135273A true JPS52135273A (en) 1977-11-12

Family

ID=12901391

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5195976A Pending JPS52135273A (en) 1976-05-06 1976-05-06 Mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS52135273A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55129108U (en) * 1979-03-09 1980-09-12
JPS568879A (en) * 1979-07-03 1981-01-29 Nec Corp Insulating gate field effect transistor
JPS56100477A (en) * 1980-01-16 1981-08-12 Toshiba Corp Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55129108U (en) * 1979-03-09 1980-09-12
JPS5854249Y2 (en) * 1979-03-09 1983-12-10 カルソニックカンセイ株式会社 Defrosting device for automotive air conditioners
JPS568879A (en) * 1979-07-03 1981-01-29 Nec Corp Insulating gate field effect transistor
JPS56100477A (en) * 1980-01-16 1981-08-12 Toshiba Corp Semiconductor device

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