JPS5318982A - Insulated gate type semiconductor device - Google Patents

Insulated gate type semiconductor device

Info

Publication number
JPS5318982A
JPS5318982A JP9387176A JP9387176A JPS5318982A JP S5318982 A JPS5318982 A JP S5318982A JP 9387176 A JP9387176 A JP 9387176A JP 9387176 A JP9387176 A JP 9387176A JP S5318982 A JPS5318982 A JP S5318982A
Authority
JP
Japan
Prior art keywords
semiconductor device
type semiconductor
insulated gate
gate type
soruce
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9387176A
Other languages
Japanese (ja)
Inventor
Yukinobu Murao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9387176A priority Critical patent/JPS5318982A/en
Publication of JPS5318982A publication Critical patent/JPS5318982A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To reduce resistance and obtain the same electrical static characteristics as those of a micro IGFET by selectively forming impurity regions of an opposite conductivity type having stepwise concentration distribution in a depth direction on a semiconductor substrate and making these as soruce, drin and wiring regions.
COPYRIGHT: (C)1978,JPO&Japio
JP9387176A 1976-08-05 1976-08-05 Insulated gate type semiconductor device Pending JPS5318982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9387176A JPS5318982A (en) 1976-08-05 1976-08-05 Insulated gate type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9387176A JPS5318982A (en) 1976-08-05 1976-08-05 Insulated gate type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5318982A true JPS5318982A (en) 1978-02-21

Family

ID=14094512

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9387176A Pending JPS5318982A (en) 1976-08-05 1976-08-05 Insulated gate type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5318982A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58131773A (en) * 1982-02-01 1983-08-05 Hitachi Ltd Semiconductor device and its manufacture
JPS61181147A (en) * 1985-02-06 1986-08-13 Nec Corp Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58131773A (en) * 1982-02-01 1983-08-05 Hitachi Ltd Semiconductor device and its manufacture
JPH05870B2 (en) * 1982-02-01 1993-01-06 Hitachi Ltd
JPS61181147A (en) * 1985-02-06 1986-08-13 Nec Corp Manufacture of semiconductor device

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